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GBJ804-F

Diodes Incorporated

GBJ804-F by Diodes Incorporated

GBJ804-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 8A, and max repetitive peak reverse voltage of 400V. It is used in applications requiring rectification of AC to DC power sources, such as power supplies and motor drives. Operating temp range: -65°C to 150°C.

Median Price

$2.600

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 36 parts In-Stock

1+ parts

$2.600

100+ parts

$1.557

1k+ parts

$0.913

10k+ parts

$0.714

36

$2.600

$1.557

$0.913

$0.714

Mouser Electronics

USA . 217 parts In-Stock

1+ parts

$2.610

100+ parts

-

1k+ parts

$0.981

10k+ parts

$0.780

217

$2.610

-

$0.981

$0.780

Verical

USA . 630 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.630

10k+ parts

-

630

-

-

$0.630

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 285 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

285

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 7,314 parts In-Stock

1+ parts

$10.140

100+ parts

$10.080

1k+ parts

$10.050

10k+ parts

$10.020

7,314

$10.140

$10.080

$10.050

$10.020

Metaverse IC Inc.

Canada . 88,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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88,000

-

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Northwest PG Solutions

USA . 1,112 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,112

-

-

-

-

Perfect Parts

USA . 1,082 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,082

-

-

-

-

Eastek

USA . 15 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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15

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-

-

-

Giza Technologies, Inc.

USA . 12 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12

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-

-

-

Native Components

USA . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6

-

-

-

-

Overview

Discover the GBJ804-F by Diodes Incorporated, a top-quality Bridge Rectifier Diode designed for efficiency and reliability. With Diodes Incorporated's proven track record of excellence, this product ensures optimal performance in various applications. From power supplies to industrial equipment, this Bridge Rectifier Diode offers unparalleled value and benefits to customers. Trust in Diodes Incorporated to provide you with cutting-edge solutions that exceed expectations. Upgrade your systems with the GBJ804-F and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the bridge rectifier diodes, making the product durable and reliable.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this bridge rectifier diode can perform well in a wide range of temperature environments.

Minimum Breakdown Voltage: 400 V

The high minimum breakdown voltage of 400 V ensures that the bridge rectifier diode can handle high voltage applications with ease.

Maximum Output Current: 8 A

The maximum output current of 8 A allows this bridge rectifier diode to deliver sufficient power for various electronic circuits and applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes it easy to mount and solder this bridge rectifier diode onto a circuit board, simplifying the assembly process.

Technical Specifications

Bridge Rectifier Diodes GBJ804-F attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

400 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

170 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBJ804-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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