Loading...

DXT651-13

Diodes Incorporated

DXT651-13 by Diodes Incorporated

DXT651-13 by Diodes Inc. is a NPN BJT transistor with VCEsat of 0.6V, hFE of 40, and IC of 3A. Ideal for switching applications, it operates b/w -55 to 150°C with a max VCE of 60V. This small outline package has 3 terminals and can handle up to 2W power dissipation.

Median Price

$0.307

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,454 parts In-Stock

1+ parts

$0.700

100+ parts

$0.327

1k+ parts

$0.215

10k+ parts

$0.163

3,454

$0.700

$0.327

$0.215

$0.163

Newark

USA . 1,665 parts In-Stock

1+ parts

$0.768

100+ parts

$0.395

1k+ parts

$0.283

10k+ parts

-

1,665

$0.768

$0.395

$0.283

-

DigiKey

USA . 5,669 parts In-Stock

1+ parts

$0.810

100+ parts

$0.326

1k+ parts

$0.224

10k+ parts

$0.172

5,669

$0.810

$0.326

$0.224

$0.172

Avnet

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50,000

-

-

-

-

Farnell

UK . 2,100 parts In-Stock

1+ parts

-

100+ parts

$0.287

1k+ parts

$0.152

10k+ parts

$0.149

2,100

-

$0.287

$0.152

$0.149

Element14

Singapore . 2,100 parts In-Stock

1+ parts

-

100+ parts

$0.307

1k+ parts

$0.158

10k+ parts

$0.156

2,100

-

$0.307

$0.158

$0.156

Arrow

USA . 80 parts In-Stock

1+ parts

-

100+ parts

$0.195

1k+ parts

-

10k+ parts

-

80

-

$0.195

-

-

Verical

USA . 80 parts In-Stock

1+ parts

-

100+ parts

$0.195

1k+ parts

-

10k+ parts

-

80

-

$0.195

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Bristol Electronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.292

1k+ parts

$0.144

10k+ parts

$0.126

2,500

-

$0.292

$0.144

$0.126

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 1,155 parts In-Stock

1+ parts

$2.506

100+ parts

-

1k+ parts

$2.406

10k+ parts

$2.406

1,155

$2.506

-

$2.406

$2.406

Native Components

USA . 224 parts In-Stock

1+ parts

$7.080

100+ parts

-

1k+ parts

-

10k+ parts

-

224

$7.080

-

-

-

Perfect Parts

USA . 12,620 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,620

-

-

-

-

Kepictronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,000

-

-

-

-

iodParts Technologies Inc.

India . 7,620 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,620

-

-

-

-

Eastek

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Continental Prestige Electronics

USA . 2,470 parts In-Stock

1+ parts

-

100+ parts

$0.289

1k+ parts

$0.175

10k+ parts

$0.141

2,470

-

$0.289

$0.175

$0.141

Northwest PG Solutions

USA . 178 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.938

10k+ parts

-

178

-

-

$6.938

-

Lixinc

USA . 118 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

118

-

-

-

-

Overview

Enhance your power management systems with the DXT651-13 from Diodes Incorporated. Designed for switching applications, this NPN Power BJT offers a maximum VCEsat of 0.6V and a minimum DC current gain of 40 hFE. With a compact small outline package, this transistor provides a maximum collector-emitter voltage of 60V and a maximum collector current of 3A. Trust in the quality and reliability of Diodes Incorporated as you elevate your power control solutions with the DXT651-13. Upgrade your systems today and experience improved performance and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and heat resistance, making the product durable and reliable.

Polarity or Channel Type: NPN

Offers efficient current flow and amplification, suitable for various electronic applications.

Configuration: SINGLE

Simplified design and easier integration into circuits for straightforward operation.

Transistor Application: SWITCHING

Designed for fast switching operations, making it ideal for applications requiring frequent on/off transitions.

Surface Mount: YES

SMT compatibility ensures easy placement on circuit boards, saving space and improving assembly efficiency.

Maximum VCEsat: 0.6 V

Low collector-emitter saturation voltage leads to reduced power loss and improved efficiency.

Maximum Power Dissipation (Abs): 2 W

High power handling capability allows for reliable performance in demanding circuits.

Minimum DC Current Gain (hFE): 40

Consistent gain ensures stable and predictable amplification of signals.

Maximum Operating Temperature: 150 °C

Wide temperature range tolerance enables operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

High voltage rating supports applications requiring higher voltage handling capabilities.

Nominal Transition Frequency (fT): 200 MHz

High frequency performance enables fast signal processing and response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) DXT651-13 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Reference Standard:

MIL-STD-202

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

DXT651-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2