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DMTH10H015LPS-13

Diodes Incorporated

DMTH10H015LPS-13 by Diodes Incorporated

DMTH10H015LPS-13 by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 120A IDM, and 0.018 ohm max RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and 85mJ EAS rating.

Median Price

$1.180

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 98 parts In-Stock

1+ parts

$1.500

100+ parts

$0.879

1k+ parts

$0.648

10k+ parts

-

98

$1.500

$0.879

$0.648

-

Mouser Electronics

USA . 2,326 parts In-Stock

1+ parts

$1.510

100+ parts

$0.633

1k+ parts

$0.453

10k+ parts

$0.406

2,326

$1.510

$0.633

$0.453

$0.406

DigiKey

USA . 433 parts In-Stock

1+ parts

$1.510

100+ parts

$0.633

1k+ parts

$0.452

10k+ parts

$0.354

433

$1.510

$0.633

$0.452

$0.354

Verical

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.354

50,000

-

-

-

$0.354

Element14

Singapore . 3,532 parts In-Stock

1+ parts

-

100+ parts

$0.861

1k+ parts

$0.762

10k+ parts

-

3,532

-

$0.861

$0.762

-

Farnell

UK . 3,112 parts In-Stock

1+ parts

-

100+ parts

$0.463

1k+ parts

$0.388

10k+ parts

$0.370

3,112

-

$0.463

$0.388

$0.370

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.468

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$0.468

-

-

-

NAC Semi

USA . 65,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

65,000

-

-

-

-

Vyrian

USA . 9,966 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,966

-

-

-

-

Flip Electronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Bristol Electronics

USA . 2,480 parts In-Stock

1+ parts

-

100+ parts

$0.352

1k+ parts

$0.263

10k+ parts

$0.244

2,480

-

$0.352

$0.263

$0.244

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 22,089 parts In-Stock

1+ parts

$0.301

100+ parts

-

1k+ parts

-

10k+ parts

-

22,089

$0.301

-

-

-

Semicontronic

India . 21,780 parts In-Stock

1+ parts

$0.301

100+ parts

$0.293

1k+ parts

$0.292

10k+ parts

-

21,780

$0.301

$0.293

$0.292

-

Argo Parts USA

USA . 4,152 parts In-Stock

1+ parts

$0.468

100+ parts

-

1k+ parts

-

10k+ parts

$0.454

4,152

$0.468

-

-

$0.454

Corohmni

South Africa . 17 parts In-Stock

1+ parts

$0.468

100+ parts

-

1k+ parts

-

10k+ parts

-

17

$0.468

-

-

-

Aztec Data Supply Inc.

USA . 1,180 parts In-Stock

1+ parts

$1.570

100+ parts

-

1k+ parts

-

10k+ parts

-

1,180

$1.570

-

-

-

Eastek

USA . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90,000

-

-

-

-

iodParts Technologies Inc.

India . 40,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40,000

-

-

-

-

Perfect Parts

USA . 5,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,600

-

-

-

-

Continental Prestige Electronics

USA . 1,102 parts In-Stock

1+ parts

-

100+ parts

$0.548

1k+ parts

$0.425

10k+ parts

-

1,102

-

$0.548

$0.425

-

Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.459

1k+ parts

$0.445

10k+ parts

$0.435

50

-

$0.459

$0.445

$0.435

Overview

Unlock the power of efficiency and reliability with the DMTH10H015LPS-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated sets the standard for quality and innovation. This N-CHANNEL Power Field Effect Transistor is ideal for switching applications, offering a seamless performance that you can trust. With a maximum pulsed drain current of 120 A and a minimum DS breakdown voltage of 100 V, this transistor ensures optimal functionality. Experience the value and benefits of this product, designed to elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers higher electron mobility and better performance compared to P-channel transistors in many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by eliminating the need for an external diode, saving space and reducing component count.

Transistor Application: SWITCHING

Optimized for fast switching applications, making it ideal for power management and control circuits.

Minimum DS Breakdown Voltage: 100 V

Suitable for high voltage applications, providing a safety margin and protecting the transistor from voltage spikes.

Package Shape: RECTANGULAR

Facilitates easy mounting and soldering onto circuit boards, enhancing manufacturing efficiency.

Operating Mode: ENHANCEMENT MODE

Enables low power consumption during idle states, improving overall energy efficiency of the system.

Maximum Pulsed Drain Current (IDM): 120 A

Handles high current spikes effectively, ensuring reliable performance in demanding applications.

Avalanche Energy Rating (EAS): 85 mJ

Provides robustness against voltage transients and power surges, enhancing the reliability of the transistor.

No. of Terminals: 5

Offers flexibility in circuit connections and configurations, allowing for versatile integration into different systems.

Package Style (Meter): SMALL OUTLINE

Occupies minimal board space, making it suitable for compact electronic devices with space constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance with low power consumption, ideal for energy-efficient applications.

Transistor Element Material: SILICON

Ensures reliability and stability over a wide temperature range, suitable for harsh operating conditions.

Terminal Finish: MATTE TIN

Provides good solderability and electrical conductivity, facilitating reliable connections in the circuit.

Maximum Drain Current (ID): 7.3 A

Sufficient current-handling capacity for medium-power applications, offering a balance between performance and efficiency.

Maximum Drain-Source On Resistance: 0.018 ohm

Low on-resistance minimizes power loss and heat dissipation, contributing to high efficiency and reliability.

Terminal Position: DUAL

Enhances thermal dissipation and current-carrying capability, improving overall performance under high load conditions.

Case Connection: DRAIN

Facilitates easy connection to external components and heat sinks, improving thermal management and reliability.

Peak Reflow Temperature °C: 260

Withstands high-temperature reflow soldering processes, ensuring reliable and consistent solder joints during assembly.

Reference Standard: AEC-Q101

Complies with automotive-grade quality standards, ensuring reliability and durability in harsh environments.

Technical Specifications

Power Field Effect Transistors (FET) DMTH10H015LPS-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Avalanche Energy Rating (EAS):

85 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

7.3 A

Maximum Drain-Source On Resistance:

.018 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

120 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMTH10H015LPS-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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