Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;
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Small Signal Field Effect Transistors (FET) DMT3020LFDFQ-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
JESD-609 Code:
Moisture Sensitivity Level (MSL):
Peak Reflow Temperature (C):
Terminal Finish:
Maximum Time At Peak Reflow Temperature (s):
DMT3020LFDFQ-7 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
LL4148
Itt Components
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .005 us; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Non Repetitive Peak Forward Current: 1 A;
1N4148
Frontier Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
2N7002
Central Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
Capar Components
RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Forward Voltage (VF): 1 V; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Output Current: .15 A;
BSS138PS,115
NXP Semiconductors
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
Multicomp Pro
BSS84PH6327XTSA2
Infineon Technologies
BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.
STM32F405RGT6
STMicroelectronics
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
AB26TRB-32.768KHZ--T
Abracon
AB26TRB-32.768KHZ--T by Abracon is a crystal oscillator with 20 ppm frequency tolerance, 126% stability, and 35000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency in surface mount configurations.
LM107H
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
LM358MX
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
261
New England Microwave
Other Interface ICs; No. of Terminals: 14; Package Equivalence Code: FL14(UNSPEC); Power Supplies (V): +-5,-15; Package Body Material: PLASTIC/EPOXY; Surface Mount: YES;
LL4148GS08
Temic Semiconductors
LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
Formosa Microsemi
2N2222A
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
SMBJ18CA
Rectron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ROHM
STM32F103C8T6
STM32F103C8T6 by STMicroelectronics is a 32-bit microcontroller with 48 terminals, operating at up to 16 MHz. It features 10-Ch 12-Bit ADC channels and 7 DMA channels, suitable for industrial applications requiring low power consumption and high-speed connectivity via CAN, I2C(2), SPI(2), USART(3), USB.
FDG8850NZ
Fairchild Semiconductor
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Position: DUAL; Qualification: Not Qualified;
2N7002KW
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI9926CDY-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI9926CDY-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 8A max drain current, and 0.018 ohm max drain-source resistance. With a small outline package style and operating up to 150°C, it suits various electronic designs.
NDS355AN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
SI4909DY-T1-GE3
Vishay Siliconix
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 8 A; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: .027 ohm;
FDV304P
Onsemi
The Onsemi FDV304P is a P-CHANNEL FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 0.46A and an Operating Temperature range of -55 to 150 °C. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount configurations.
BSS138K
BSS138K by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage and 0.22A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating from -55 to 150 °C, this MOSFET has 2.5 ohm max drain-source resistance and matte tin terminal finish.
FDN352AP
FDN352AP by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 1.3A, 0.18 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a max Power Dissipation of 0.5W and can withstand temperatures up to 150°C.
2N7000
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
IRLML2803TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
2N7002BKMB,315
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Transistor Application: SWITCHING; JESD-609 Code: e3;
SI2319CDS-T1-GE3
SI2319CDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 40V breakdown voltage and 4.4A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.5W. The small outline package and -55 to 150°C operating temperature range make it suitable for various electronic designs.
BSS131E6327
Siemens
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 5 pF; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
BSH103,215
NXP Semiconductors BSH103,215 is a N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with built-in DIODE and 0.9A Drain Current. Operating in ENHANCEMENT MODE, it has 0.75W Power Dissipation and operates up to 150°C.
2N7000TA
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
FDC6327C
FDC6327C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 2.7A, on-resistance of 0.08 ohm, and operates in enhancement mode for switching applications. The package is SMD, with 6 terminals in Gull Wing form, rated up to 150°C.
FDC6305N
FDC6305N by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Max Drain Current of 2.7A, Max Power Dissipation of 0.96W, and Max Operating Temperature of 150°C. This small outline transistor has a rectangular package and operates in ENHANCEMENT MODE.
FDC602P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 5.5 A;
2N7002PW
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Additional Features: LOGIC LEVEL COMPATIBLE; Peak Reflow Temperature (C): 260;
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DMT3009LDT-7
Diodes Incorporated
Small Signal Field-Effect Transistors; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Terminal Finish: NICKEL PALLADIUM GOLD;
DMT3020LDV-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
DMT3020UFDB-13
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: NICKEL PALLADIUM GOLD; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4;
DMT3020LDV-13
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
DMT3020LFDBQ-7
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1; Terminal Finish: NICKEL PALLADIUM GOLD;
DMT3020LFVW-7
Small Signal Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
DMT3020LFDB-7
DMT3020LFDB-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 7.7A max drain current, and 0.02 ohm max on resistance. Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a peak reflow temp of 260°C.
DMT3020UFDB-7
Small Signal Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
DMT3009LDT-7A
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Peak Reflow Temperature (C): 260;
DMT3020LFDF-13
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4;
DMT3020LFDF-7
Small Signal Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
DMT3020LFVW-13
DMT3020LFDB-13
Small Signal Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30;
DMT3020LSDQ-13
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
DMT3009LEV-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
DMT3020LFDBQ-13
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Time At Peak Reflow Temperature (s): 30;
DMT3020LFDFQ-13
Small Signal Field-Effect Transistors; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
DMT3009LEV-13
Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
DMT3020LFCL-7
Small Signal Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e4; Peak Reflow Temperature (C): 260;
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