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DMT3020LFDB-7

Diodes Incorporated

DMT3020LFDB-7 by Diodes Incorporated

DMT3020LFDB-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 7.7A max drain current, and 0.02 ohm max on resistance. Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a peak reflow temp of 260°C.

Median Price

$0.401

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5,547 parts In-Stock

1+ parts

$0.850

100+ parts

$0.375

1k+ parts

$0.260

10k+ parts

$0.190

5,547

$0.850

$0.375

$0.260

$0.190

Mouser Electronics

USA . 2,972 parts In-Stock

1+ parts

$0.850

100+ parts

$0.376

1k+ parts

$0.261

10k+ parts

$0.207

2,972

$0.850

$0.376

$0.261

$0.207

Newark

USA . 24 parts In-Stock

1+ parts

$1.030

100+ parts

$0.478

1k+ parts

$0.362

10k+ parts

-

24

$1.030

$0.478

$0.362

-

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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$0.180

15,000

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-

-

$0.180

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

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$0.206

6,000

-

-

-

$0.206

Farnell

UK . 934 parts In-Stock

1+ parts

-

100+ parts

$0.388

1k+ parts

$0.281

10k+ parts

$0.257

934

-

$0.388

$0.281

$0.257

Element14

Singapore . 934 parts In-Stock

1+ parts

-

100+ parts

$0.401

1k+ parts

$0.296

10k+ parts

-

934

-

$0.401

$0.296

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Cyclops Electronics Ltd

UK . 131,907 parts In-Stock

1+ parts

-

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131,907

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NAC Semi

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

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$0.263

12,000

-

-

-

$0.263

Prism Electronics

USA . 46 parts In-Stock

1+ parts

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46

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Distributors (Availability)

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Native Components

USA . 57 parts In-Stock

1+ parts

$1.270

100+ parts

-

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10k+ parts

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57

$1.270

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-

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Northwest PG Solutions

USA . 1,396 parts In-Stock

1+ parts

$1.397

100+ parts

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1,396

$1.397

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Kepictronics

USA . 98,900 parts In-Stock

1+ parts

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98,900

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Eastek

USA . 6,000 parts In-Stock

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6,000

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Lixinc

USA . 4,564 parts In-Stock

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4,564

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Perfect Parts

USA . 3,366 parts In-Stock

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3,366

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Continental Prestige Electronics

USA . 1,575 parts In-Stock

1+ parts

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100+ parts

$0.242

1k+ parts

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1,575

-

$0.242

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-

Overview

Discover the superior performance and reliability of the DMT3020LFDB-7 Small Signal Field Effect Transistor by Diodes Incorporated. With cutting-edge technology and high-quality materials, this N-CHANNEL transistor is ideal for switching applications. Its compact design and maximum power dissipation of 1.8W make it perfect for space-constrained projects. Experience enhanced efficiency and precise control with the DMT3020LFDB-7, offering customers exceptional value and unmatched performance in every use. Upgrade your electronic projects today with this top-of-the-line transistor from Diodes Incorporated!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for portable electronic devices.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better conductivity and higher mobility of charge carriers, leading to improved performance in switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode allows for efficient switching and protection against voltage spikes, enhancing the reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption, making it ideal for various electronic circuits.

Surface Mount: YES

Being surface mountable makes the transistor easy to integrate into compact circuit designs, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures reliable operation even in high voltage applications, offering protection against voltage surges.

Maximum Drain Current (ID): 7.7 A

With a high maximum drain current rating, this transistor can handle heavy loads without overheating, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.02 ohm

The low drain-source on resistance reduces power loss and improves efficiency during operation, ensuring optimal performance in various circuit designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMT3020LFDB-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

7.7 A

Maximum Drain-Source On Resistance:

.02 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMT3020LFDB-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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