Loading...

DMC2025UFDBQ-7

Diodes Incorporated

DMC2025UFDBQ-7 by Diodes Incorporated

DMC2025UFDBQ-7 by Diodes Inc. is a Power FET with N/P-channel, 2 separate elements, and built-in diode. It operates in enhancement mode for switching applications with max drain current of 6A and on-resistance of 0.035 ohm. This MOSFET has a package style of small outline, peak temp rating of 260C, and meets AEC-Q101 standards.

Median Price

$0.450

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,233 parts In-Stock

1+ parts

$0.450

100+ parts

$0.207

1k+ parts

$0.131

10k+ parts

-

2,233

$0.450

$0.207

$0.131

-

Mouser Electronics

USA . 1,710 parts In-Stock

1+ parts

$0.450

100+ parts

$0.193

1k+ parts

$0.131

10k+ parts

$0.103

1,710

$0.450

$0.193

$0.131

$0.103

Verical

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.098

84,000

-

-

-

$0.098

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

iodParts Technologies Inc.

India . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Northwest PG Solutions

USA . 56 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56

-

-

-

-

Native Components

USA . 36 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

36

-

-

-

-

Overview

Looking to upgrade your power field effect transistors? Look no further than the DMC2025UFDBQ-7 by Diodes Incorporated. With a reputation for top-quality components, Diodes Incorporated has created a powerhouse in the switching transistor category. The DMC2025UFDBQ-7 offers customers enhanced performance and reliability with its N-channel and P-channel configuration and separate dual elements. Ideal for a wide range of applications, this transistor provides maximum power dissipation of 1.4W with a minimal on-resistance of 0.035 ohm. Trust Diodes Incorporated to deliver cutting-edge technology and superior products for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable in various operating conditions.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Offers flexibility in circuit design and allows for both sourcing and sinking of current.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Enables efficient and optimized circuit designs while also providing overvoltage protection with the built-in diode.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast operation and minimal power loss.

Minimum DS Breakdown Voltage: 20 V

Supports high voltage applications, providing a safety margin for the device and the overall circuit.

Maximum Pulsed Drain Current (IDM): 20 A

Capable of handling high current pulses, suitable for applications requiring transient high power levels.

Maximum Operating Temperature: 150 °C

Can operate efficiently in elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Power Dissipation (Abs): 1.4 W

Efficient power handling capability ensures reliable performance and prolongs the product's lifespan.

Maximum Drain-Source On Resistance: 0.035 ohm

Low on-resistance leads to reduced power loss and enhances the overall efficiency of the circuit.

Reference Standard: AEC-Q101; IATF 16949; MIL-STD-202

Compliance with industry standards ensures quality, reliability, and consistency in performance.

Technical Specifications

Power Field Effect Transistors (FET) DMC2025UFDBQ-7 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Avalanche Energy Rating (EAS):

8.5 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

77 pF

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

20 A

Reference Standard:

AEC-Q101; IATF 16949; MIL-STD-202

Surface Mount:

NO

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC2025UFDBQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 9