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DGD0504FN-7

Diodes Incorporated

DGD0504FN-7 by Diodes Incorporated

DGD0504FN-7 by Diodes Inc. is a MOSFET gate driver with 10 terminals, operating from -40 to 125°C. It features a max supply voltage of 20V and built-in transient protection, suitable for automotive applications. With a turn-on time of 0.82µs and turn-off time of 0.22µs, it offers source and sink output current flow direction in a small outline package style.

Median Price

$1.300

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 5,023 parts In-Stock

1+ parts

$1.150

100+ parts

$0.741

1k+ parts

$0.628

10k+ parts

-

5,023

$1.150

$0.741

$0.628

-

DigiKey

USA . 8,057 parts In-Stock

1+ parts

$1.450

100+ parts

$0.848

1k+ parts

$0.756

10k+ parts

-

8,057

$1.450

$0.848

$0.756

-

Mouser Electronics

USA . 2,016 parts In-Stock

1+ parts

$1.450

100+ parts

$0.849

1k+ parts

$0.746

10k+ parts

$0.708

2,016

$1.450

$0.849

$0.746

$0.708

Element14

Singapore . 5,023 parts In-Stock

1+ parts

$1.550

100+ parts

-

1k+ parts

-

10k+ parts

-

5,023

$1.550

-

-

-

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.753

9,000

-

-

-

$0.753

Farnell

UK . 5,023 parts In-Stock

1+ parts

-

100+ parts

$0.454

1k+ parts

$0.401

10k+ parts

$0.393

5,023

-

$0.454

$0.401

$0.393

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,000

-

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 13,755 parts In-Stock

1+ parts

$0.404

100+ parts

-

1k+ parts

-

10k+ parts

-

13,755

$0.404

-

-

-

Continental Prestige Electronics

USA . 5,999 parts In-Stock

1+ parts

$1.310

100+ parts

$0.752

1k+ parts

$0.526

10k+ parts

-

5,999

$1.310

$0.752

$0.526

-

Microchip USA

USA . 1,437 parts In-Stock

1+ parts

$3.458

100+ parts

-

1k+ parts

-

10k+ parts

-

1,437

$3.458

-

-

-

Modulus Dynamics

Lithuania . 60 parts In-Stock

1+ parts

$13.229

100+ parts

$13.229

1k+ parts

$13.229

10k+ parts

-

60

$13.229

$13.229

$13.229

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Overview

Unlock the potential of your electronic designs with the DGD0504FN-7 MOSFET Gate Driver by Diodes Incorporated. Crafted with precision and expertise, this high-quality component offers reliable performance, built-in transient protections, and a wide temperature range, making it ideal for automotive applications. With a compact design, quick turn-on/off times, and low supply current requirements, this gate driver delivers exceptional value and efficiency to customers seeking a superior solution for their projects. Elevate your designs with the DGD0504FN-7 and experience the difference quality manufacturing can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration onto a circuit board, saving space and simplifying the manufacturing process.

Maximum Supply Voltage: 20 V

This high maximum supply voltage capability makes this gate driver suitable for a wide range of applications where higher voltages are required.

Package Shape: SQUARE

The square shape of the package provides ease of handling and mounting compared to irregular shapes, making it user-friendly.

Built-in Protections: TRANSIENT

The presence of transient protection ensures that the gate driver is safeguarded against voltage spikes and surges, enhancing reliability in operation.

No. of Terminals: 10

Having 10 terminals allows for a variety of connections and configurations, increasing flexibility in designing the circuit layout.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of small outline, heat sink/slug, and very thin profile design makes this gate driver compact, efficient in heat dissipation, and suitable for space-constrained applications.

Minimum Supply Voltage: 10 V

The low minimum supply voltage requirement allows the gate driver to operate efficiently even in low-voltage conditions, expanding its usability.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this gate driver can withstand elevated temperatures, ensuring stable performance in demanding environments.

Output Characteristics: TOTEM-POLE

The totem-pole output configuration provides both sourcing and sinking capabilities, enhancing compatibility with a wide range of MOSFETs and improving switching efficiency.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the gate driver to function reliably in cold conditions, making it suitable for temperature-sensitive applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and corrosion resistance, ensuring secure connections and long-term stability of the gate driver.

Terminal Position: DUAL

The dual terminal position allows for symmetrical mounting and connection options, simplifying installation and enhancing the aesthetics of the circuit layout.

Maximum Seated Height: 0.8 mm

The low maximum seated height contributes to a compact overall design, enabling the gate driver to be integrated into space-constrained applications.

Width: 3 mm

The slim width dimension facilitates integration into densely populated circuit boards, optimizing space utilization and enabling efficient PCB layout.

High Side Driver: YES

The inclusion of a high side driver functionality allows for effective control of high-side power devices, expanding the range of applications where this gate driver can be used.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reflow process, preventing damage to the gate driver during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance of 260°C enables reliable soldering of the gate driver, ensuring robust mechanical connections.

Length: 3 mm

The compact length dimension contributes to the overall small form factor of the gate driver, enabling it to fit into tight spaces and reduce the footprint on the PCB.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade indicates that this gate driver meets stringent quality standards for operation in automotive applications, ensuring durability and reliability in harsh conditions.

Terminal Form: NO LEAD

The no-lead terminal form enhances the mechanical robustness and electrical performance of the gate driver, reducing the risk of solder joint failures and improving overall reliability.

Maximum Supply Current: 0.5 mA

With a low maximum supply current requirement, this gate driver is energy-efficient and generates minimal heat during operation, contributing to system reliability.

Input Characteristics: STANDARD

Standard input characteristics provide compatibility with a wide range of control signals and interface standards, facilitating easy integration into diverse electronic systems.

Nominal Supply Voltage: 15 V

The 15V nominal supply voltage ensures stable operation and compatibility with common voltage sources, making the gate driver versatile and easy to implement in various applications.

Turn-on Time: 0.82 us

The fast turn-on time of 0.82 microseconds enables quick and precise control of the MOSFETs, enhancing the overall performance and efficiency of the system.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5mm allows for high-density mounting on the PCB, enabling compact and space-saving designs in electronic systems.

Interface IC Type: HALF BRIDGE BASED IGBT/MOSFET DRIVER

Being a half-bridge based IGBT/MOSFET driver, this gate driver offers versatile control capabilities for both power semiconductor devices, increasing the flexibility and applicability of the product.

Turn-off Time: 0.22 us

The fast turn-off time of 0.22 microseconds ensures rapid switching and control of the MOSFETs, improving the overall efficiency and response time of the gate driver.

Output Current Flow Direction: SOURCE AND SINK

By providing both sourcing and sinking capabilities, this gate driver supports bidirectional current flow, allowing for efficient control of the connected MOSFETs in various operational scenarios.

Technical Specifications

MOSFET Gate Drivers DGD0504FN-7 attributes and parameters. Explore more MOSFET Gate Drivers devices from Diodes Incorporated

Specs

Built-in Protections:

TRANSIENT

High Side Driver:

YES

Input Characteristics:

STANDARD

JESD-30 Code:

S-PDSO-N10

JESD-609 Code:

e3

Length:

3 mm

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Output Current Flow Direction:

SOURCE AND SINK

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC10,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Current:

.5 mA

Maximum Supply Voltage:

20 V

Minimum Supply Voltage:

10 V

Nominal Supply Voltage:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.22 us

Turn-on Time:

.82 us

Width:

3 mm

Trade Compliance

DGD0504FN-7 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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