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DGD0507AFN-7

Diodes Incorporated

DGD0507AFN-7 by Diodes Incorporated

DGD0507AFN-7 by Diodes Inc. is a MOSFET gate driver with a supply voltage range of 8V to 14V, suitable for automotive applications. It features a Schmitt trigger input, totum-pole output, and peak current limit of 2A. With a small outline package style and dual terminals, it offers fast turn-on/off times for efficient operation in automotive systems.

Median Price

$0.740

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,720 parts In-Stock

1+ parts

$0.740

100+ parts

$0.417

1k+ parts

$0.365

10k+ parts

$0.323

2,720

$0.740

$0.417

$0.365

$0.323

Element14

Singapore . 2,393 parts In-Stock

1+ parts

$1.030

100+ parts

$0.627

1k+ parts

$0.622

10k+ parts

-

2,393

$1.030

$0.627

$0.622

-

Verical

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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21,000

-

-

-

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Farnell

UK . 1,937 parts In-Stock

1+ parts

-

100+ parts

$0.486

1k+ parts

$0.314

10k+ parts

-

1,937

-

$0.486

$0.314

-

RS (Exports)

UK . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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8

-

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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15,000

-

-

-

-

Chip Stock

USA . 5,790 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,790

-

-

-

-

Nova Conductors

Japan . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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800

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 449 parts In-Stock

1+ parts

$0.407

100+ parts

-

1k+ parts

-

10k+ parts

-

449

$0.407

-

-

-

Semicontronic

India . 6,016 parts In-Stock

1+ parts

$0.770

100+ parts

$0.751

1k+ parts

$0.747

10k+ parts

-

6,016

$0.770

$0.751

$0.747

-

Ampacity Inc.

Singapore . 5,685 parts In-Stock

1+ parts

$0.770

100+ parts

-

1k+ parts

-

10k+ parts

-

5,685

$0.770

-

-

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Continental Prestige Electronics

USA . 3,308 parts In-Stock

1+ parts

$0.880

100+ parts

$0.484

1k+ parts

$0.330

10k+ parts

$0.315

3,308

$0.880

$0.484

$0.330

$0.315

Argo Parts USA

USA . 4,937 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,937

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-

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Robosynatics

Brazil . 4,797 parts In-Stock

1+ parts

-

100+ parts

$0.399

1k+ parts

$0.391

10k+ parts

$0.391

4,797

-

$0.399

$0.391

$0.391

Lucentia Tech

USA . 4,797 parts In-Stock

1+ parts

-

100+ parts

$0.399

1k+ parts

$0.391

10k+ parts

$0.391

4,797

-

$0.399

$0.391

$0.391

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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3,000

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-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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2,000

-

-

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,000

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Overview

Get ready to elevate your electronic designs with the DGD0507AFN-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality MOSFET Gate Drivers that are perfect for a wide range of applications. With a small outline, heat sink profile, and automotive-grade temperature grade, this gate driver is designed for reliability and performance. Experience fast turn-on and turn-off times, high side driver capability, and a nominal output peak current limit of 2A. Trust Diodes Incorporated to provide you with the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good mechanical strength and insulation properties, making the product durable and reliable.

Surface Mount: YES

Surface mount design allows for easy and efficient PCB assembly, saving space and reducing manufacturing cost.

Maximum Supply Voltage: 14 V

With a high maximum supply voltage, this gate driver can handle a wide range of voltage levels, making it versatile for different applications.

Minimum Supply Voltage: 8 V

The low minimum supply voltage allows for operation in a variety of voltage conditions, ensuring flexibility in use.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance even in challenging environments where temperature can fluctuate.

Output Characteristics: TOTEM-POLE

Totem-pole output provides efficient switching capabilities, enabling fast and precise control of the MOSFETs.

Terminal Finish: MATTE TIN

Matte tin finish offers good electrical conductivity and corrosion resistance, enhancing the longevity of the gate driver.

High Side Driver: YES

Having a high side driver simplifies the circuit design and allows for direct control of high side MOSFETs, making it suitable for various power applications.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Half bridge based IC design provides efficient and reliable drive for MOSFETs in half-bridge configurations, ensuring optimal performance.

Technical Specifications

MOSFET Gate Drivers DGD0507AFN-7 attributes and parameters. Explore more MOSFET Gate Drivers devices from Diodes Incorporated

Specs

High Side Driver:

YES

Input Characteristics:

SCHMITT TRIGGER

Interface IC Type:

JESD-30 Code:

S-PDSO-N10

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Nominal Output Peak Current Limit:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC10,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

8 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Turn-off Time:

.056 us

Turn-on Time:

.035 us

Width:

3 mm

Trade Compliance

DGD0507AFN-7 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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