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DDC114EH-7

Diodes Incorporated

DDC114EH-7 by Diodes Incorporated

DDC114EH-7 by Diodes Inc. is a NPN BJT with 2 elements and built-in resistor, suitable for surface mount applications. It has a max power dissipation of 0.15W, hFE of 30, and can operate up to 150°C. Ideal for small outline packages requiring high transition frequency at 250MHz.

Median Price

$0.185

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,049 parts In-Stock

1+ parts

$0.280

100+ parts

$0.105

1k+ parts

$0.063

10k+ parts

$0.055

2,049

$0.280

$0.105

$0.063

$0.055

DigiKey

USA . 1,594 parts In-Stock

1+ parts

$0.280

100+ parts

$0.105

1k+ parts

$0.068

10k+ parts

$0.048

1,594

$0.280

$0.105

$0.068

$0.048

Newark

USA . 2,190 parts In-Stock

1+ parts

$0.296

100+ parts

$0.121

1k+ parts

$0.084

10k+ parts

-

2,190

$0.296

$0.121

$0.084

-

Verical

USA . 432,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.035

432,000

-

-

-

$0.035

Farnell

UK . 2,400 parts In-Stock

1+ parts

-

100+ parts

$0.090

1k+ parts

$0.054

10k+ parts

$0.047

2,400

-

$0.090

$0.054

$0.047

Element14

Singapore . 2,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.081

10k+ parts

$0.060

2,400

-

-

$0.081

$0.060

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.040

9,000

-

-

-

$0.040

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.054

6,000

-

-

-

$0.054

Semi Source

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 86,358 parts In-Stock

1+ parts

$0.028

100+ parts

-

1k+ parts

-

10k+ parts

-

86,358

$0.028

-

-

-

Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

$0.309

100+ parts

$0.123

1k+ parts

$0.052

10k+ parts

$0.034

3,000

$0.309

$0.123

$0.052

$0.034

Corohmni

South Africa . 343 parts In-Stock

1+ parts

$0.855

100+ parts

-

1k+ parts

-

10k+ parts

-

343

$0.855

-

-

-

Robosynatics

Brazil . 12,177 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,177

-

-

-

-

Lucentia Tech

USA . 12,177 parts In-Stock

1+ parts

-

100+ parts

$1.955

1k+ parts

$1.915

10k+ parts

$1.915

12,177

-

$1.955

$1.915

$1.915

Argo Parts USA

USA . 4,353 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,353

-

-

-

-

RC Electronics

USA . 3,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,600

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.040

10k+ parts

-

3,000

-

-

$0.040

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

-

-

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Overview

Enhance your electronic designs with the DDC114EH-7 by Diodes Incorporated. Known for their top-quality components, Diodes Incorporated delivers reliable and efficient solutions for small signal bipolar junction transistors. This NPN transistor features a separate configuration with built-in resistors, making it ideal for a wide range of applications. With a maximum operating temperature of 150°C and a nominal transition frequency of 250 MHz, this transistor offers outstanding performance and durability. Trust Diodes Incorporated to provide you with exceptional value and innovation in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliable performance.

Polarity or Channel Type: NPN

Commonly used in amplification circuits, making it versatile for various electronic applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy integration into circuit designs and simplifies component layout with built-in resistor.

Surface Mount: YES

Enables easy and efficient mounting onto circuit boards, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 0.15 W

Suitable for low-power applications, ensuring efficient performance without risk of overheating.

Package Shape: RECTANGULAR

Facilitates easy placement and orientation on circuit boards, optimizing design flexibility.

Minimum DC Current Gain (hFE): 30

Ensures reliable and consistent amplification of signals in electronic circuits.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Allows for handling of moderate voltage levels in circuit applications.

Transistor Element Material: SILICON

Provides good performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.05 A

Suitable for low current applications, maintaining efficiency and reliability in circuit operation.

Terminal Finish: MATTE TIN

Enhances solderability and ensures good electrical contact for reliable performance.

Nominal Transition Frequency (fT): 250 MHz

Provides high speed performance for signal amplification and processing in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDC114EH-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDC114EH-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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