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DDC123JH-7

Diodes Incorporated

DDC123JH-7 by Diodes Incorporated

DDC123JH-7 by Diodes Inc. is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It has a max power dissipation of 0.15W, operates up to 150°C, and can handle a max collector-emitter voltage of 50V. Ideal for applications requiring small signal amplification in compact electronic devices.

Median Price

$0.258

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,394 parts In-Stock

1+ parts

$0.450

100+ parts

$0.175

1k+ parts

$0.117

10k+ parts

$0.102

5,394

$0.450

$0.175

$0.117

$0.102

DigiKey

USA . 2,465 parts In-Stock

1+ parts

$0.450

100+ parts

$0.175

1k+ parts

$0.117

10k+ parts

$0.085

2,465

$0.450

$0.175

$0.117

$0.085

Verical

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.066

39,000

-

-

-

$0.066

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.035

3,000

-

-

-

$0.035

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.112

100+ parts

-

1k+ parts

-

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-

100

$0.112

-

-

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Vyrian

USA . 98,414 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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98,414

-

-

-

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NAC Semi

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.114

36,000

-

-

-

$0.114

IBS Electronics

USA . 36,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.078

36,000

-

-

-

$0.078

Rutronik

Germany . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.054

6,000

-

-

-

$0.054

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 98,796 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

-

98,796

$0.022

-

-

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.110

100+ parts

-

1k+ parts

$0.105

10k+ parts

-

2,000

$0.110

-

$0.105

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Continental Prestige Electronics

USA . 4,873 parts In-Stock

1+ parts

$0.112

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

4,873

$0.112

-

-

$0.110

Argo Parts USA

USA . 4,324 parts In-Stock

1+ parts

$0.112

100+ parts

-

1k+ parts

-

10k+ parts

$0.109

4,324

$0.112

-

-

$0.109

Corohmni

South Africa . 438 parts In-Stock

1+ parts

$1.129

100+ parts

-

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438

$1.129

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Aztec Data Supply Inc.

USA . 3,933 parts In-Stock

1+ parts

$1.740

100+ parts

-

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3,933

$1.740

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Advanced Electronics

New Zealand . 750 parts In-Stock

1+ parts

$1.889

100+ parts

$1.719

1k+ parts

$1.549

10k+ parts

-

750

$1.889

$1.719

$1.549

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iodParts Technologies Inc.

India . 39,000 parts In-Stock

1+ parts

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100+ parts

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39,000

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Infinite Electronics LLP (Excess)

. 6,001 parts In-Stock

1+ parts

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6,001

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Formix International (Excess)

India . 135 parts In-Stock

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135

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Overview

Discover the power of the DDC123JH-7 by Diodes Incorporated, a top-quality Small Signal Bipolar Junction Transistor with NPN polarity. With a compact rectangular package and dual terminals, this transistor is perfect for a wide range of applications. Trust in the reliability and expertise of Diodes Incorporated to deliver superior performance and durability. Experience seamless integration with its built-in resistor configuration for added convenience. Upgrade your electronics with the DDC123JH-7 and unlock limitless possibilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Allows for easy integration into circuits that require an NPN transistor, offering versatility in design.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor a convenient choice.

Surface Mount: YES

Enables easy and efficient PCB assembly, reducing production time and costs.

Maximum Power Dissipation (Abs): 0.15 W

The high power dissipation capability allows for reliable operation under various load conditions, ensuring optimal performance.

Package Shape: RECTANGULAR

Facilitates easy placement and soldering on the PCB, contributing to a smooth assembly process.

Minimum DC Current Gain (hFE): 80

Provides consistent and stable amplification of the input signal, ensuring reliable signal processing in the circuit.

Maximum Operating Temperature: 150 °C

Allows for operation in a wide range of temperature environments, making the transistor suitable for various applications.

Maximum Collector-Emitter Voltage: 50 V

Can handle higher voltage levels, making it suitable for applications that require voltage amplification or switching.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, ensuring stable performance and longevity.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate currents, enabling the transistor to power a variety of circuits effectively.

Terminal Finish: MATTE TIN

Provides a reliable and secure electrical connection, ensuring consistent performance over time.

Nominal Transition Frequency (fT): 250 MHz

Enables high-speed signal processing, making the transistor suitable for applications that require fast switching or amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDC123JH-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDC123JH-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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