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BCX38CSTZ

Diodes Incorporated

BCX38CSTZ by Diodes Incorporated

BCX38CSTZ by Diodes Inc. is a NPN Darlington BJT transistor with hFE of 10k, Vce of 60V, and Ic of 0.8A. Ideal for switching applications due to its high gain and current capabilities in an inline package style.

Median Price

$1.154

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 600 parts In-Stock

1+ parts

$1.009

100+ parts

$0.918

1k+ parts

$0.827

10k+ parts

-

600

$1.009

$0.918

$0.827

-

DigiKey

USA . 354 parts In-Stock

1+ parts

$1.300

100+ parts

$0.536

1k+ parts

$0.378

10k+ parts

-

354

$1.300

$0.536

$0.378

-

Mouser Electronics

USA . 143 parts In-Stock

1+ parts

$1.400

100+ parts

$0.573

1k+ parts

$0.393

10k+ parts

$0.347

143

$1.400

$0.573

$0.393

$0.347

Verical

USA . 16,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.298

16,000

-

-

-

$0.298

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.356

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$0.356

-

-

-

Vyrian

USA . 1,209 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,209

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,472 parts In-Stock

1+ parts

$0.356

100+ parts

-

1k+ parts

-

10k+ parts

$0.345

3,472

$0.356

-

-

$0.345

Continental Prestige Electronics

USA . 802 parts In-Stock

1+ parts

$0.356

100+ parts

-

1k+ parts

-

10k+ parts

$0.349

802

$0.356

-

-

$0.349

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.356

100+ parts

$0.349

1k+ parts

-

10k+ parts

-

500

$0.356

$0.349

-

-

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$1.009

100+ parts

$0.918

1k+ parts

$0.827

10k+ parts

-

600

$1.009

$0.918

$0.827

-

iodParts Technologies Inc.

India . 2,299 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,299

-

-

-

-

Perfect Parts

USA . 2,130 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,130

-

-

-

-

Overview

Elevate your electronic projects with the BCX38CSTZ by Diodes Incorporated. Known for their top-quality components, Diodes Incorporated delivers small signal bipolar junction transistors that are ideal for switching applications. The BCX38CSTZ features a high DC current gain and a maximum collector-emitter voltage of 60V, providing reliability and efficiency. Whether you're a hobbyist or a professional, this NPN Darlington transistor offers exceptional value and performance, making it a must-have for any electronics enthusiast.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile in its usage.

Configuration: DARLINGTON

The Darlington configuration provides high current gain and allows for high sensitivity in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast response and efficient operation.

Maximum Collector-Emitter Voltage: 60 V

With a maximum voltage rating of 60V, this transistor can handle higher voltage circuits with ease.

Maximum Collector Current (IC): 0.8 A

Capable of handling a maximum current of 0.8A, this transistor is suitable for low to medium power applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX38CSTZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BCX38CSTZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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