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BCX38CSTOA

Diodes Incorporated

BCX38CSTOA by Diodes Incorporated

BCX38CSTOA by Diodes Inc. is a NPN Darlington BJT transistor with hFE of 10,000 and Vce of 60V. Ideal for switching applications, it has a max IC of 0.8A and is made of silicon material in a plastic/epoxy package with matte tin finish.

Median Price

$1.000

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 16,000 parts In-Stock

1+ parts

$1.000

100+ parts

-

1k+ parts

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10k+ parts

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16,000

$1.000

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Vyrian

USA . 618 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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618

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-

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Nova Conductors

Japan . 49 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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49

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 618 parts In-Stock

1+ parts

$6.936

100+ parts

-

1k+ parts

-

10k+ parts

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618

$6.936

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,000

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Overview

Looking for a reliable and high-quality Small Signal Bipolar Junction Transistor? Look no further than the BCX38CSTOA by Diodes Incorporated. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 10000, this NPN Darlington transistor is perfect for switching applications. The matte tin terminal finish ensures durability while the IN-LINE package style makes installation a breeze. Trust in Diodes Incorporated for superior performance and value. Upgrade your electronic devices with the BCX38CSTOA today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Offers versatile usage in electronic circuits and allows for easy integration with other components.

Configuration: DARLINGTON

Enhances the current gain of the transistor, making it ideal for high-gain amplification and switching applications.

Transistor Application: SWITCHING

Designed specifically for fast switching operations, making it perfect for applications requiring rapid on/off transitions.

Package Shape: RECTANGULAR

Allows for efficient placement on PCBs and ensures space-saving designs in electronics projects.

Terminal Form: WIRE

Simplifies the connection process and enables easy soldering onto PCBs or wire leads.

No. of Terminals: 3

Offers straightforward installation and connection in circuits, suitable for basic electronic projects.

Package Style (Meter): IN-LINE

Facilitates easy handling and placement of the transistor during assembly and installation.

Minimum DC Current Gain (hFE): 10000

Provides high amplification capabilities, ensuring accurate signal amplification in various electronic circuits.

Maximum Collector-Emitter Voltage: 60 V

Supports high voltage requirements in circuits, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Ensures reliability and stability in performance, making it a dependable component for electronic devices.

Maximum Collector Current (IC): 0.8 A

Offers the capability to handle moderate current loads, suitable for small-scale electronic projects.

Terminal Finish: MATTE TIN

Offers corrosion resistance and ensures a secure connection for long-term reliability in electronic circuits.

Terminal Position: SINGLE

Simplifies connection and installation, suitable for applications with limited space constraints.

Maximum Time At Peak Reflow Temperature (s): 10

Allows for efficient soldering during assembly, ensuring proper bonding for reliable performance.

Peak Reflow Temperature °C: 260

Provides compatibility with common soldering techniques, making it easy to integrate into electronic projects.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCX38CSTOA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10000

JESD-30 Code:

R-PSIP-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BCX38CSTOA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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