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AS358P-E1

Diodes Incorporated

AS358P-E1 by Diodes Incorporated

AS358P-E1 by Diodes Inc. is an Op Amp with 5000uV Max Input Offset Voltage, 70dB CMRR, and 10000 Min Voltage Gain. Ideal for industrial applications, it operates at -40 to 85°C with a supply voltage of ±1.5/±18/3/36V. With a compact design and low bias current of 0.2uA, it's suitable for precision signal processing in various electronic systems.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,699 parts In-Stock

1+ parts

$0.580

100+ parts

$0.214

1k+ parts

$0.133

10k+ parts

$0.097

4,699

$0.580

$0.214

$0.133

$0.097

Verical

USA . 106,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.083

106,000

-

-

-

$0.083

Farnell

UK . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.107

1k+ parts

$0.092

10k+ parts

$0.081

2,000

-

$0.107

$0.092

$0.081

Element14

Singapore . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.160

1k+ parts

$0.151

10k+ parts

$0.140

2,000

-

$0.160

$0.151

$0.140

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.127

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.127

-

-

-

TME

Poland . 1,669 parts In-Stock

1+ parts

$0.290

100+ parts

$0.150

1k+ parts

$0.126

10k+ parts

$0.118

1,669

$0.290

$0.150

$0.126

$0.118

Vyrian

USA . 41,182 parts In-Stock

1+ parts

-

100+ parts

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-

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41,182

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-

-

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Chip Stock

USA . 24,000 parts In-Stock

1+ parts

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24,000

-

-

-

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NAC Semi

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

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8,000

-

-

-

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VNN

France . 4,341 parts In-Stock

1+ parts

-

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4,341

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-

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ComSIT Distribution GmbH

Germany . 1,141 parts In-Stock

1+ parts

-

100+ parts

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1,141

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Huijzer Components

Netherlands . 25 parts In-Stock

1+ parts

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25

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.124

100+ parts

-

1k+ parts

$0.120

10k+ parts

-

50

$0.124

-

$0.120

-

Argo Parts USA

USA . 2,438 parts In-Stock

1+ parts

$0.127

100+ parts

-

1k+ parts

-

10k+ parts

$0.123

2,438

$0.127

-

-

$0.123

Semicontronic

India . 23,877 parts In-Stock

1+ parts

$0.154

100+ parts

$0.150

1k+ parts

$0.149

10k+ parts

-

23,877

$0.154

$0.150

$0.149

-

Continental Prestige Electronics

USA . 2,071 parts In-Stock

1+ parts

$0.387

100+ parts

$0.170

1k+ parts

$0.095

10k+ parts

$0.085

2,071

$0.387

$0.170

$0.095

$0.085

Aztec Data Supply Inc.

USA . 289 parts In-Stock

1+ parts

$2.975

100+ parts

-

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10k+ parts

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289

$2.975

-

-

-

Corohmni

South Africa . 12 parts In-Stock

1+ parts

$7.402

100+ parts

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12

$7.402

-

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

1+ parts

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70,000

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,476 parts In-Stock

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23,476

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Lixinc

USA . 18,113 parts In-Stock

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18,113

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Perfect Parts

USA . 9,509 parts In-Stock

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9,509

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Eastek

USA . 4,000 parts In-Stock

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4,000

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Kepictronics

USA . 50 parts In-Stock

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50

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Overview

Discover the AS358P-E1 by Diodes Incorporated, a top-tier operational amplifier (Op Amp) designed for high-quality performance and reliability. With a wide range of applications, this product offers exceptional value to customers seeking precision and efficiency in their electronic designs. Benefit from the industry-leading technology and expertise of Diodes Incorporated, providing innovative solutions for your operational amplifier needs. Elevate your projects with the AS358P-E1 and experience superior functionality and enhanced results like never before.

Feature Benefit Bullets

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage helps in reducing errors in signal processing applications, making this product suitable for accurate measurements.

Nominal Common Mode Reject Ratio: 70 dB

High common mode rejection ratio ensures that the amplifier can effectively reject common mode noise, resulting in cleaner output signals.

Minimum Voltage Gain: 10000

High minimum voltage gain allows for amplification of weak input signals without significant distortion, making this product suitable for high gain applications.

Technology: BIPOLAR

Bipolar technology offers good noise performance and high bandwidth, making this product suitable for precision applications requiring high-speed operation.

Technical Specifications

Operational Amplifiers (Op Amps) AS358P-E1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Diodes Incorporated

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±18/3/36 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

10000

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

40 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.362 in (9.2 mm)

Width:

0.3 in (7.62 mm)

Maximum Seated Height:

0.17 in (4.31 mm)

Total Terminals:

8

Terminal Pitch:

0.1 in (2.54 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Surface Mount:

No

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-XDIP-T8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tube

Package Code:

DIP

Package Shape:

Package Style:

In Line

Package Equivalence Code:

DIP8,.3

Trade Compliance

AS358P-E1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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