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AS358GTR-G1

Diodes Incorporated

AS358GTR-G1 by Diodes Incorporated

AS358GTR-G1 by Diodes Inc. is an operational amplifier with a max input offset voltage of 5000uV and a nominal voltage of 5V, suitable for industrial applications. With a max bias current of 0.2uA, it offers a min voltage gain of 10000 and operates within a temperature range of -40 to 85°C.

Median Price

$0.091

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 338 parts In-Stock

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338

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VNN

France . 200 parts In-Stock

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200

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Nova Conductors

Japan . 46 parts In-Stock

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46

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TME

Poland . 37 parts In-Stock

1+ parts

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100+ parts

$0.091

1k+ parts

$0.082

10k+ parts

$0.077

37

-

$0.091

$0.082

$0.077

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 88 parts In-Stock

1+ parts

$4.339

100+ parts

-

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88

$4.339

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Aztec Data Supply Inc.

USA . 71 parts In-Stock

1+ parts

$5.945

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71

$5.945

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AZTECH Wire

Italy . 338 parts In-Stock

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$12.448

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338

$12.448

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Perfect Parts

USA . 313,600 parts In-Stock

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313,600

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 4,506 parts In-Stock

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4,506

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Continental Prestige Electronics

USA . 940 parts In-Stock

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940

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Robosynatics

Brazil . 200 parts In-Stock

1+ parts

-

100+ parts

$4.975

1k+ parts

$4.607

10k+ parts

$4.607

200

-

$4.975

$4.607

$4.607

Lucentia Tech

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$4.975

1k+ parts

$4.607

10k+ parts

$4.607

200

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$4.975

$4.607

$4.607

Microchip USA

USA . 191 parts In-Stock

1+ parts

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191

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Overview

Experience the unparalleled performance of the AS358GTR-G1 from Diodes Incorporated, a leading manufacturer known for quality and reliability. This operational amplifier (Op Amp) boasts a wide range of applications, making it a versatile choice for various projects. With features like low input offset voltage and low bias current, this product offers exceptional value and benefits to customers looking for high-quality components. Trust Diodes Incorporated to deliver top-notch products that exceed expectations and help you achieve your goals effortlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage helps in reducing errors and inaccuracies in signal amplification, making this op amp suitable for precision applications.

Maximum Average Bias Current (IIB): 0.2 uA

Low bias current contributes to low power consumption and ensures stable performance over time.

Surface Mount: YES

Surface mount packaging allows for easy and compact integration onto circuit boards, saving space and simplifying assembly processes.

Nominal Common Mode Reject Ratio: 70 dB

High common mode rejection ratio helps in eliminating noise and interference from the input signal, resulting in cleaner output signals.

Nominal Supply Voltage / Vsup (V): 5

This supply voltage is commonly used in many electronic devices, making this op amp compatible with a wide range of applications.

Maximum Supply Voltage Limit: 40 V

With a high supply voltage limit, this op amp can handle a wide range of power supply voltages, providing flexibility in different circuit designs.

Minimum Voltage Gain: 10000

High minimum voltage gain ensures strong signal amplification capability, making this op amp suitable for applications requiring high gain.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows this op amp to perform reliably in various environmental conditions, including industrial settings.

Technology: BIPOLAR

Bipolar technology offers precise signal processing and low noise operation, making this op amp ideal for applications that require high accuracy.

Technical Specifications

Operational Amplifiers (Op Amps) AS358GTR-G1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Diodes Incorporated

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±18/3/36 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

10000

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

40 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

AS358GTR-G1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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