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AS358GTR-E1

Diodes Incorporated

AS358GTR-E1 by Diodes Incorporated

AS358GTR-E1 by Diodes Inc. is an Op Amp with 5000uV Max Input Offset Voltage, 70dB Nominal CMRR, and 10000 Min Voltage Gain. Ideal for industrial applications, it operates at -40 to 85°C with a supply voltage of ±1.5/±18/3/36V. Package style: Small Outline Thin Profile Shrink Pitch.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,491 parts In-Stock

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1,491

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VNN

France . 1,125 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Corohmni

South Africa . 652 parts In-Stock

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$1.509

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652

$1.509

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Microchip USA

USA . 2,646 parts In-Stock

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$2.509

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2,646

$2.509

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Aztec Data Supply Inc.

USA . 101 parts In-Stock

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$3.907

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101

$3.907

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AZTECH Wire

Italy . 549 parts In-Stock

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$6.737

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549

$6.737

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Continental Prestige Electronics

USA . 5,268 parts In-Stock

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Argo Parts USA

USA . 4,338 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Experience the superior quality and precision engineering of Diodes Incorporated with the AS358GTR-E1 operational amplifier. Designed for a wide range of applications, this high-performance op amp offers unmatched reliability and efficiency. Benefit from its advanced features, such as low power consumption and compact design, making it ideal for industrial-grade projects. Trust in Diodes Incorporated to deliver cutting-edge technology that exceeds expectations and provides exceptional value to our customers. Elevate your next project with the AS358GTR-E1 and experience unparalleled performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the operational amplifier, ensuring long-term reliability.

Maximum Input Offset Voltage: 5000 uV

Low input offset voltage allows for accurate signal processing, making this operational amplifier suitable for precision applications.

Maximum Average Bias Current (IIB): 0.2 uA

Low bias current helps minimize errors in signal amplification, making this op amp ideal for high-precision circuits.

Surface Mount: YES

Surface mount capability makes installation of this op amp quick and easy, saving time and effort during circuit board assembly.

Nominal Supply Voltage / Vsup (V): 5

Stable nominal supply voltage of 5V ensures consistent performance of the op amp in various applications.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows this op amp to function reliably in diverse environmental conditions.

Technical Specifications

Operational Amplifiers (Op Amps) AS358GTR-E1 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Diodes Incorporated

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

BIPOLAR

Power Supply:

±1.5/±18/3/36 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

No

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Common Mode Rejection Ratio (CMRR ):

70 dB

Input Offset Voltage Limit:

5000 uV

Minimum Voltage Gain:

10000

Peak Bias Current:

200 nA

Maximum Bias Current (IIB) @25 °C:

200 nA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

40 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

2 mA

Physical Characteristics

Length:

0.173 in (4.4 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

AS358GTR-E1 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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