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2SC1815-YPBFREE

Central Semiconductor

2SC1815-YPBFREE by Central Semiconductor

2SC1815-YPBFREE by Central Semiconductor is a NPN BJT transistor with a max VCEsat of 1V, hFE of 120, and fT of 80MHz. Ideal for amplifier applications due to its single configuration and max collector current of 0.15A. Package style is cylindrical with through-hole terminals, making it suitable for various electronic designs.

Median Price

$0.930

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,169 parts In-Stock

1+ parts

$0.930

100+ parts

$0.594

1k+ parts

$0.430

10k+ parts

$0.350

3,169

$0.930

$0.594

$0.430

$0.350

Overview

Looking for a high-quality Small Signal Bipolar Junction Transistor that delivers exceptional performance? Look no further than the 2SC1815-YPBFREE by Central Semiconductor. With its NPN configuration and amplifier application, this transistor is perfect for a range of electronic projects. From its durable plastic/epoxy package to its impressive maximum VCEsat of 1V, this transistor offers great value and reliability. Trust Central Semiconductor for top-notch components that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures long-term reliability and easy handling.

Polarity or Channel Type: NPN

Commonly used type of transistor for various amplifier applications.

Configuration: SINGLE

Simplified design for easy integration into circuit layouts.

Transistor Application: AMPLIFIER

Specifically designed for amplification of signals, making it ideal for audio or radio frequency applications.

Maximum VCEsat: 1 V

Low collector-emitter saturation voltage helps in reducing power dissipation and improving efficiency.

Package Shape: ROUND

Space-saving design suitable for applications where compactness is important.

Terminal Form: THROUGH-HOLE

Traditional terminal form for easy soldering and connection.

No. of Terminals: 3

Standard number of terminals for basic transistor connections.

Maximum Power Dissipation (Abs): 0.4 W

Good power handling capability for reliable operation.

Package Style (Meter): CYLINDRICAL

Easily mountable in cylindrical enclosures or heatsinks for effective heat dissipation.

Maximum Power Dissipation Ambient: 0.4 W

Efficient power dissipation under varying ambient temperature conditions.

Minimum DC Current Gain (hFE): 120

High current gain ensures proper amplification of signals.

Maximum Operating Temperature: 125 °C

Wide operating temperature range for versatility in different environments.

Maximum Collector-Emitter Voltage: 50 V

Adequate collector-emitter voltage rating for various signal amplification tasks.

Transistor Element Material: SILICON

Common and reliable material choice for transistor manufacturing.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature conditions for diverse application scenarios.

Maximum Collector Current (IC): 0.15 A

Sufficient collector current rating for handling moderate power requirements.

Terminal Finish: MATTE TIN OVER NICKEL

Corrosion-resistant finish for long-term durability and stable electrical connections.

Terminal Position: BOTTOM

Standard terminal positioning for easy integration into circuit boards.

Nominal Transition Frequency (fT): 80 MHz

High frequency response for accurate amplification of signals within this range.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC1815-YPBFREE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.4 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

2SC1815-YPBFREE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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