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2N6053PBFREE

Central Semiconductor

2N6053PBFREE by Central Semiconductor

2N6053PBFREE by Central Semiconductor is a PNP Darlington BJT with hFE of 100, VCEO of 60V, and IC of 8A. Ideal for switching applications due to its high current capacity and low operating temperature range from -65 to 200°C. Package style is flange mount with matte tin finish, making it suitable for various industrial uses.

Median Price

$8.080

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 39 parts In-Stock

1+ parts

$8.080

100+ parts

$4.890

1k+ parts

$3.880

10k+ parts

-

39

$8.080

$4.890

$3.880

-

Overview

Unleash the power of the 2N6053PBFREE Power Bipolar Junction Transistor by Central Semiconductor! Crafted with precision and expertise, this PNP Darlington transistor is designed for high-performance switching applications. Its durable metal package ensures reliability while the matte tin finish over nickel terminals provides superior conductivity. With a maximum collector-emitter voltage of 60V and a nominal transition frequency of 4MHz, this transistor delivers unparalleled efficiency and functionality. Upgrade your electronic projects with the 2N6053PBFREE and experience the quality and innovation that Central Semiconductor brings to the table.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides durability and efficient heat dissipation, making the transistor reliable for high-power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, offering fast switching speeds and low saturation voltages.

Configuration: DARLINGTON

Darlington configuration provides high current gain and low saturation voltage, making the transistor suitable for high-power switching applications.

Transistor Application: SWITCHING

Designed for switching applications, which require fast switching speeds and high current capabilities.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices and circuits.

Terminal Form: PIN/PEG

Pin/peg terminal form provides easy connectivity and soldering onto circuit boards.

No. of Terminals: 2

Having only 2 terminals simplifies the circuit design while still providing adequate functionality for switching applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting onto heatsinks or other surfaces for efficient heat dissipation.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures stable and reliable operation in various operating conditions.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, the transistor can withstand high temperatures without degradation in performance.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating allows for safe operation in high-voltage circuits.

Transistor Element Material: SILICON

Silicon material ensures reliable operation and low leakage current in various operating conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the transistor can operate in extreme cold environments without issues.

Maximum Collector Current (IC): 8 A

High maximum collector current rating allows for switching high currents without the risk of damage to the transistor.

Terminal Finish: MATTE TIN OVER NICKEL

Matte tin over nickel finish provides good conductivity and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position ensures easy and convenient mounting onto circuit boards or heatsinks.

Nominal Transition Frequency (fT): 4 MHz

High nominal transition frequency allows for fast switching speeds and high-frequency operation in switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6053PBFREE attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6053PBFREE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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