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BLV31

Asi Semiconductor

BLV31 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Maximum Collector Current (IC): 3 A; Qualification: Not Qualified;

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Digiode

USA . 4,129 parts In-Stock

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Vyrian

USA . 1,776 parts In-Stock

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Anansix

USA . 138 parts In-Stock

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138

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ACDS - Activité Composants Distribution Service

France . 2 parts In-Stock

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ECAB

Sweden . 2 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 290 parts In-Stock

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$34.050

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290

$34.050

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Native Components

USA . 934 parts In-Stock

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$77.705

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$74.597

934

$77.705

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$74.597

Northwest PG Solutions

USA . 1,931 parts In-Stock

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$85.476

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$85.476

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UNI Independent Distributors

Spain . 4,005 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Corphita

USA . 934 parts In-Stock

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934

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Kepictronics

USA . 100 parts In-Stock

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) BLV31 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

15

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BLV31 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-003-5355, 5961010035355

NIIN

010035355

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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