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2N5945

Asi Semiconductor

2N5945 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): .8 A; Package Style (Meter): POST/STUD MOUNT;

Median Price

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Lifecycle Status

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9

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Vyrian

USA . 5,068 parts In-Stock

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Digiode

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Anansix

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ComSIT Distribution GmbH

Germany . 180 parts In-Stock

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GES GmbH

Germany . 8 parts In-Stock

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R&J Components

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Speed Components Ltd

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ECAB

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MISTER SPROCKETS

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IDEA Electronic Components Group

UK . 1,496 parts In-Stock

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$1.680

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$1.512

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MKK Technologies

India . 1,131 parts In-Stock

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$3.159

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DigiPath Technology Company

USA . 1,131 parts In-Stock

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Native Components

USA . 840 parts In-Stock

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Northwest PG Solutions

USA . 1,012 parts In-Stock

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Corphita

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Parana Technologies

USA . 1,583 parts In-Stock

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RTC Component Inc.

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Technical Specifications

RF Power Bipolar Junction Transistors (BJT) 2N5945 attributes and parameters. Explore more RF Power Bipolar Junction Transistors (BJT) devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

16 V

Configuration:

Minimum DC Current Gain (hFE):

20

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

O-CRPM-F4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

FLAT

Terminal Position:

RADIAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5945 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-069-6242, 5961010696242, 5961-99-644-5389, 5961996445389

NIIN

010696242, 996445389

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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