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APS1604M-3SQR-ZR

Ap Memory Technology

APS1604M-3SQR-ZR by Ap Memory Technology

APS1604M-3SQR-ZR by Ap Memory Technology is a 2MX8 Pseudo Static RAM with synchronous operation and a clock frequency of 133 MHz. It has a memory density of 16Mb and is suitable for applications requiring high-speed data storage and retrieval.

Median Price

$1.820

Lifecycle Status

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3

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 11,508 parts In-Stock

1+ parts

$1.820

100+ parts

$1.590

1k+ parts

$1.460

10k+ parts

$1.420

11,508

$1.820

$1.590

$1.460

$1.420

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Nova Conductors

Japan . 35 parts In-Stock

1+ parts

$1.120

100+ parts

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35

$1.120

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Vyrian

USA . 10,091 parts In-Stock

1+ parts

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10,091

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$1.098

100+ parts

-

1k+ parts

$1.054

10k+ parts

-

100

$1.098

-

$1.054

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Continental Prestige Electronics

USA . 4,096 parts In-Stock

1+ parts

$1.120

100+ parts

-

1k+ parts

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10k+ parts

$1.098

4,096

$1.120

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-

$1.098

Argo Parts USA

USA . 1,089 parts In-Stock

1+ parts

$1.120

100+ parts

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1,089

$1.120

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Overview

AP Memory Quad SPI (QSPI) PSRAM SDR in SOP8 Package offers Internet of Things (IoT) RAM in 16M to 64M densities with 2Mx8 or 8Mx8 organization. The SOP8 package version supports the most simple PCB design. Depending on the device, they have maximum clock frequencies from 84MHz to 144MHz. AP Memory QSPI Pseudostatic Random Access Memory (PSRAM) SDRs operating supply voltages are available in 1.8V and 3V versions. These devices support industrial grade (-40°C to +85°C) by default as well as extended temperature (-40°C to +105°C).

Feature Benefit Bullets

Surface Mount: YES

This product can be easily mounted onto a circuit board, making it more convenient for integration and reducing the need for additional components.

No. of Functions: 1

With a single function, this product is straightforward to use and allows for efficient memory storage and retrieval.

Package Shape: RECTANGULAR

Its rectangular shape enhances compatibility and ease of installation in various electronic systems.

Operating Mode: SYNCHRONOUS

This synchronous operation ensures reliable and consistent data processing, making this product suitable for demanding applications.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage provides stable power to the SRAM, ensuring optimal performance and reliability.

No. of Terminals: 8

With its 8 terminals, this SRAM integrates seamlessly into electronic circuits, enabling efficient data transfer and storage.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile of this package style contribute to space-saving designs and efficient heat dissipation, enhancing overall system performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product demonstrates excellent thermal stability, ensuring reliable operation even in challenging environments.

Organization: 2MX8

The 2Mx8 organization allows for a high-density memory configuration, providing ample storage capacity for complex data tasks.

Minimum Operating Temperature: -40 °C

This product's ability to operate at temperatures as low as -40°C ensures its suitability for a wide range of environments, including cold climates and extreme conditions.

Terminal Position: DUAL

The dual terminal position enhances versatility and flexibility in circuit board layout, enabling seamless integration and connectivity.

Maximum Seated Height: 0.5 mm

With a maximum seated height of only 0.5mm, this SRAM is compact and contributes to thinner and more compact electronic devices.

Maximum Clock Frequency (fCLK): 133 MHz

Operating at a maximum clock frequency of 133 MHz, this SRAM delivers high-speed data processing capabilities, ideal for applications requiring rapid information access.

Width: 2 mm

This product's compact width ensures efficient utilization of board space, allowing for more components in a limited area.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage requirement of 2.7V ensures compatibility with various power supply configurations, making it versatile and reliable.

Length: 3 mm

With its small length, this SRAM contributes to compact and space-efficient designs.

Technology: CMOS

Utilizing CMOS technology, this SRAM offers low power consumption, high speed, and enhanced noise immunity, making it an ideal choice for efficient data processing.

Parallel or Serial: SERIAL

Operating in serial mode allows for simplified peripheral connectivity and efficient data transfer, making it suitable for systems handling sequential data.

Terminal Form: NO LEAD

The no-lead terminal form facilitates easy and reliable soldering, ensuring secure connections and long-lasting performance.

Maximum Supply Current: 7 mA

With a maximum supply current of 7 mA, this SRAM is power-efficient, reducing energy consumption and contributing to overall system sustainability.

No. of Words: 2097152 words

The extensive storage capacity of 2,097,152 words allows for the processing and storage of large amounts of data, meeting the demands of data-intensive tasks.

Memory Width: 8

With a memory width of 8, this SRAM supports efficient parallel data transfers, enabling quick and simultaneous access to multiple bits of information.

Terminal Pitch: 0.5 mm

The tight terminal pitch of 0.5mm increases integration density, allowing for high-performance circuit designs in limited space.

No. of Words Code: 2M

Utilizing a 2M code, this product represents a large memory capacity, accommodating extensive data requirements with ease.

Maximum Supply Voltage (Vsup): 3.6 V

This SRAM can operate within a maximum supply voltage of 3.6V, ensuring compatibility with various system voltage specifications for versatile integration.

Memory Density: 16777216 bit

With a memory density of 16,777,216 bits, this SRAM offers ample storage capacity for diverse data storage and retrieval needs.

Memory IC Type: PSEUDO STATIC RAM

The use of Pseudo Static RAM technology provides fast access times, lower power consumption, and non-volatile data storage characteristics, making this product reliable and efficient.

Maximum Standby Current: 0.00015 Amp

With an extremely low maximum standby current of 0.00015 Amp, this SRAM minimizes power consumption during idle periods, enhancing energy efficiency.

Technical Specifications

SRAM APS1604M-3SQR-ZR attributes and parameters. Explore more SRAM devices from Ap Memory Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-XDSO-N8

Length:

3 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Output Enable:

NO

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.11,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Maximum Seated Height:

.5 mm

Maximum Standby Current:

.00015 Amp

Maximum Supply Current:

7 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

2 mm

Trade Compliance

APS1604M-3SQR-ZR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Ap Memory Technology

AP Memory is a fabless IC design and marketing company. We are a world leader in Pseudo-SRAM. We are also leading the world in AI memory solutions, particularly for 3D IC. Our headquarters is located in Hsinchu, Taiwan, with R&D centers in the US, China, Japan, and sales offices worldwide. Members of our R&D teams mainly come from a number of industry leaders such as Intel, Cypress, Qimonda, Mitsubishi, among others. Armed with strong development capabilities, we provide customized/optimized memory solutions to a wide range of applications.

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