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HMC473MS8

Analog Devices

HMC473MS8 by Analog Devices

Analog Devices' HMC473MS8 is a RF attenuator with 29 dB nominal attenuation and 3.5 dB max insertion loss. It operates b/w 450 MHz to 2200 MHz, ideal for RF/microwave applications requiring precise signal control in components like amplifiers or transceivers.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 7,947 parts In-Stock

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7,947

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Digiode

USA . 79 parts In-Stock

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79

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Resion

USA . 2 parts In-Stock

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Parana Technologies

USA . 4,779 parts In-Stock

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$2.175

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$2.023

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4,779

$2.175

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$2.023

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IDEA Electronic Components Group

UK . 2,305 parts In-Stock

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$2.339

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$2.222

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DigiPath Technology Company

USA . 414 parts In-Stock

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$3.649

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$3.503

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Semicontronic

India . 1,489 parts In-Stock

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$5.000

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$4.875

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$4.850

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1,489

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$4.850

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AZTECH Wire

Italy . 748 parts In-Stock

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$12.706

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One Stop Electronics

USA . 1,304 parts In-Stock

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$35.000

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Corphita

USA . 307 parts In-Stock

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Overview

Elevate your RF/Microwave systems with the Analog Devices HMC473MS8 variable attenuator. Crafted with precision and quality by a trusted manufacturer, this component offers a nominal attenuation of 29 dB and a maximum input power of 29.03 dBm, ensuring optimal performance in a wide range of applications. With a construction that prioritizes durability and reliability, this attenuator is designed to enhance signal control and management with a maximum insertion loss of 3.5 dB. Trust Analog Devices to deliver cutting-edge technology that brings value and efficiency to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the attenuator lightweight and durable, making it suitable for a variety of applications.

Maximum Input Power (CW): 29.03 dBm

High maximum input power handling capability allows for reliable operation in high-power RF environments.

Nominal Attenuation: 29 dB

Provides a significant level of signal attenuation, allowing for precise control of the signal strength.

Construction: COMPONENT

Component-level construction ensures high quality and reliability in the attenuator's performance.

Power Supplies (V): 3.3

Low power supply voltage requirement enables efficient operation and integration with various systems.

No. of Terminals: 8

Multiple terminals allow for versatile connectivity options and integration into complex RF systems.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures stable performance in various environmental conditions.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures makes the attenuator suitable for outdoor or harsh environments.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and ensures reliable electrical connections.

Maximum Insertion Loss: 3.5 dB

Low insertion loss helps minimize signal degradation and maintain signal integrity in RF systems.

Technology: GAAS

Gallium arsenide (GaAs) technology offers high performance and reliability in RF and microwave applications.

RF or Microwave Device Type: VARIABLE ATTENUATOR

Variable attenuator allows for adjustable signal attenuation, offering flexibility in signal control.

Characteristic Impedance: 50 ohm

Characteristic impedance of 50 ohm ensures proper matching with other RF components for efficient signal transfer.

Minimum Operating Frequency: 450 MHz

Low minimum operating frequency allows for use in a wide range of RF communication and testing applications.

Mounting Feature: SURFACE MOUNT

Surface mount design allows for easy and convenient integration onto circuit boards or RF modules.

Maximum Operating Frequency: 2200 MHz

High maximum operating frequency enables the attenuator to be used in various RF and microwave applications.

Technical Specifications

RF/Microwave Attenuators HMC473MS8 attributes and parameters. Explore more RF/Microwave Attenuators devices from Analog Devices

Specs

Nominal Attenuation:

29 dB

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Input Power (CW):

29.03 dBm

Maximum Insertion Loss:

3.5 dB

JESD-609 Code:

e0

Mounting Feature:

No. of Terminals:

8

Maximum Operating Frequency:

2200 MHz

Minimum Operating Frequency:

450 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

TSSOP8,.19

Power Supplies (V):

3.3

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Attenuators

Technology:

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

HMC473MS8 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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