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HMC376LP3E

Analog Devices

HMC376LP3E by Analog Devices

Analog Devices' HMC376LP3E is a wideband medium power RF amplifier with 11.5 dB gain, operating from 700 MHz to 1000 MHz. It has a max input power of 15 dBm and operates on a 5V power supply. This component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.

Median Price

$15.020

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Analog Devices Inc

USA . 372 parts In-Stock

1+ parts

$15.020

100+ parts

$11.460

1k+ parts

$8.050

10k+ parts

-

372

$15.020

$11.460

$8.050

-

DigiKey

USA . 66 parts In-Stock

1+ parts

$17.040

100+ parts

$13.026

1k+ parts

$11.955

10k+ parts

-

66

$17.040

$13.026

$11.955

-

Mouser Electronics

USA . 52 parts In-Stock

1+ parts

$17.040

100+ parts

$13.020

1k+ parts

$11.950

10k+ parts

-

52

$17.040

$13.020

$11.950

-

Verical

USA . 426 parts In-Stock

1+ parts

-

100+ parts

$10.000

1k+ parts

$10.000

10k+ parts

$10.000

426

-

$10.000

$10.000

$10.000

Rochester

USA . 176 parts In-Stock

1+ parts

-

100+ parts

$10.060

1k+ parts

$9.000

10k+ parts

$8.470

176

-

$10.060

$9.000

$8.470

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 394 parts In-Stock

1+ parts

$9.234

100+ parts

-

1k+ parts

-

10k+ parts

-

394

$9.234

-

-

-

Vyrian

USA . 510 parts In-Stock

1+ parts

$9.720

100+ parts

-

1k+ parts

-

10k+ parts

-

510

$9.720

-

-

-

Cogito LLC

Ukraine . 45 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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45

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,746 parts In-Stock

1+ parts

$2.140

100+ parts

-

1k+ parts

$1.990

10k+ parts

-

1,746

$2.140

-

$1.990

-

IDEA Electronic Components Group

UK . 2,004 parts In-Stock

1+ parts

$2.301

100+ parts

-

1k+ parts

$2.186

10k+ parts

-

2,004

$2.301

-

$2.186

-

DigiPath Technology Company

USA . 917 parts In-Stock

1+ parts

$3.590

100+ parts

$3.446

1k+ parts

-

10k+ parts

-

917

$3.590

$3.446

-

-

Ampacity Inc.

Singapore . 262 parts In-Stock

1+ parts

$8.260

100+ parts

-

1k+ parts

-

10k+ parts

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262

$8.260

-

-

-

Semicontronic

India . 220 parts In-Stock

1+ parts

$8.260

100+ parts

$8.054

1k+ parts

$8.012

10k+ parts

-

220

$8.260

$8.054

$8.012

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Corphita

USA . 989 parts In-Stock

1+ parts

$8.748

100+ parts

-

1k+ parts

-

10k+ parts

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989

$8.748

-

-

-

Perfect Parts

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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100

-

-

-

-

Overview

Elevate your RF and microwave applications with the HMC376LP3E by Analog Devices. Manufactured with precision and quality in mind, this wide-band medium power amplifier offers a powerful gain of 11.5 dB and a wide frequency range from 700 MHz to 1000 MHz. With a durable plastic/epoxy package body and matte tin terminal finish, this component is designed for reliable performance even in extreme temperatures. Trust Analog Devices to deliver cutting-edge technology that meets your needs for high-quality RF amplification. Experience enhanced signal strength and seamless connectivity with the HMC376LP3E – because when it comes to your applications, only the best will do.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring the amplifier can withstand various environmental conditions.

Maximum Input Power (CW): 15 dBm

Handles high power input signals efficiently without distortion, making it suitable for demanding applications.

Construction: COMPONENT

Consists of individual components that can be easily replaced or upgraded, increasing the longevity and versatility of the amplifier.

Power Supplies (V): 5

Operates on a standard 5V power supply, reducing the need for specialized power sources and simplifying integration into existing systems.

No. of Terminals: 16

Offers multiple connectivity options for a wide range of input and output configurations, increasing flexibility in system design.

Maximum Operating Temperature: 85 °C

Can operate efficiently in high-temperature environments, ensuring reliable performance under challenging conditions.

Minimum Operating Temperature: -40 °C

Maintains functionality in low-temperature conditions, making it suitable for applications that require operation in extreme environments.

Terminal Finish: MATTE TIN

Provides a reliable and corrosion-resistant connection for the terminals, enhancing the overall performance and longevity of the amplifier.

Technology: GAAS

Utilizes Gallium Arsenide technology, known for its high-frequency capabilities and low noise performance, resulting in superior signal amplification.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

Offers a broad frequency range and moderate power output, making it a versatile option for various RF and microwave applications.

Characteristic Impedance: 50 ohm

Matches the impedance of standard RF systems, ensuring efficient power transfer and signal integrity in the amplifier.

Gain: 11.5 dB

Amplifies the input signal with minimal signal loss, providing a boost in output power for improved signal quality and range.

Minimum Operating Frequency: 700 MHz

Supports a wide range of frequencies, allowing for compatibility with a variety of RF and microwave systems.

Mounting Feature: SURFACE MOUNT

Enables easy and secure installation on circuit boards, simplifying the assembly process and reducing the overall footprint of the amplifier.

Maximum Operating Frequency: 1000 MHz

Handles high-frequency signals effectively, making it suitable for applications that require amplification of signals in the microwave range.

Technical Specifications

RF & Microwave Amplifiers HMC376LP3E attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

11.5 dB

Maximum Input Power (CW):

15 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Frequency:

1000 MHz

Minimum Operating Frequency:

700 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC16,.12SQ,20

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

Terminal Finish:

MATTE TIN

Trade Compliance

HMC376LP3E RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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