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HMC286E

Analog Devices

HMC286E by Analog Devices

Analog Devices' HMC286E is a RF & Microwave Amplifier with 16 dB Gain, operating from 2300 MHz to 2500 MHz. It has a Max Input Power of 0 dBm and operates b/w -40°C to 85°C. Ideal for narrow band low power applications due to its construction as a COMPONENT with Matte Tin finish and 50 ohm impedance.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

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1k+

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Analog Devices Inc

USA . 491 parts In-Stock

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Chip Stock

USA . 17,631 parts In-Stock

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Vyrian

USA . 2,272 parts In-Stock

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Digiode

USA . 391 parts In-Stock

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QIE Inc.

USA . 39 parts In-Stock

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LWI Electronics Inc

India . 35 parts In-Stock

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Parana Technologies

USA . 832 parts In-Stock

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$1.760

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$1.637

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832

$1.760

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IDEA Electronic Components Group

UK . 153 parts In-Stock

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$1.893

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$1.798

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DigiPath Technology Company

USA . 2,237 parts In-Stock

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$2.953

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$2.835

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Semicontronic

India . 384 parts In-Stock

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$35.000

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$34.125

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$33.950

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Component Stockers USA

USA . 377 parts In-Stock

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$99.990

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Authorized Procurement Solutions

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Corphita

USA . 424 parts In-Stock

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Overview

Unleash the power of precision with the Analog Devices HMC286E RF & Microwave Amplifier. Crafted by a trusted industry leader, this component offers unmatched quality and reliability for your applications. From narrow band low power to high-frequency operations, this amplifier delivers a gain of 16 dB with an impressive maximum input power. Elevate your projects with the HMC286E's superior performance and durability, setting you ahead in the competitive world of RF & Microwave technology.

Feature Benefit Bullets

Maximum Input Power (CW): 0 dBm

This product can handle a maximum input power of 0 dBm, making it suitable for low power applications.

Construction: COMPONENT

Being a component, this RF & Microwave amplifier can be easily integrated into various systems and circuits for enhanced performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this amplifier can withstand high temperature environments without any degradation in performance.

Minimum Operating Temperature: -40 °C

The amplifier can operate efficiently even in low temperature conditions as low as -40°C.

Terminal Finish: Matte Tin (Sn)

The matte tin finish on the terminals ensures good conductivity and reliability in connectivity.

RF or Microwave Device Type: NARROW BAND LOW POWER

Being a narrow band low power device, this amplifier is ideal for specific frequency range applications that require low power consumption.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier is compatible with various RF and microwave systems, ensuring seamless integration.

Gain: 16 dB

This amplifier provides a gain of 16 dB, which boosts the strength of the input signal for improved output performance.

Minimum Operating Frequency: 2300 MHz

The amplifier can operate at a minimum frequency of 2300 MHz, making it suitable for applications that require signal amplification in this frequency range.

Maximum Operating Frequency: 2500 MHz

With a maximum operating frequency of 2500 MHz, this amplifier covers a wide range of frequencies, making it versatile for different applications.

Technical Specifications

RF & Microwave Amplifiers HMC286E attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16 dB

Maximum Input Power (CW):

0 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

2500 MHz

Minimum Operating Frequency:

2300 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

HMC286E RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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