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HMC-C016

Analog Devices

HMC-C016 by Analog Devices

Analog Devices' HMC-C016 is a wide band low power RF amplifier with 18 dB gain, operating from 7-17 GHz. With a max input power of 10 dBm and gold terminal finish, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,403 parts In-Stock

1+ parts

-

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9,403

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Digiode

USA . 85 parts In-Stock

1+ parts

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85

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,051 parts In-Stock

1+ parts

$1.000

100+ parts

-

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1,051

$1.000

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Parana Technologies

USA . 4,235 parts In-Stock

1+ parts

$1.106

100+ parts

-

1k+ parts

$1.028

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4,235

$1.106

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$1.028

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IDEA Electronic Components Group

UK . 697 parts In-Stock

1+ parts

$1.189

100+ parts

-

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$1.130

10k+ parts

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697

$1.189

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$1.130

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DigiPath Technology Company

USA . 1,072 parts In-Stock

1+ parts

$1.855

100+ parts

$1.781

1k+ parts

-

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1,072

$1.855

$1.781

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Semicontronic

India . 1,576 parts In-Stock

1+ parts

$7.000

100+ parts

$6.825

1k+ parts

$6.790

10k+ parts

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1,576

$7.000

$6.825

$6.790

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AZTECH Wire

Italy . 295 parts In-Stock

1+ parts

$10.090

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295

$10.090

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Ampacity Inc.

Singapore . 385 parts In-Stock

1+ parts

$23.000

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385

$23.000

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Corphita

USA . 618 parts In-Stock

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618

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Overview

Elevate your RF and microwave amplifier game with the HMC-C016 by Analog Devices. With a wide band low power design and impressive 18 dB gain, this coaxial construction device is perfect for a variety of applications. Whether you're looking to boost signals in communications systems or enhance radar performance, this amplifier delivers unmatched quality and reliability. Trust in Analog Devices' reputation for excellence and innovation, and experience the value and benefits that the HMC-C016 brings to your projects. Upgrade your system today and take your RF performance to new heights.

Feature Benefit Bullets

Maximum Input Power (CW): 10 dBm

With a maximum input power of 10 dBm, this amplifier can handle high power signals without distortion, ensuring reliable performance.

Construction: COAXIAL

The coaxial construction provides excellent shielding and isolation, reducing signal interference and improving overall signal quality.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this amplifier can withstand a wide range of environmental conditions, making it suitable for various applications.

Minimum Operating Temperature: -55 °C

The amplifier's ability to operate at as low as -55 °C enables it to function in extreme cold conditions, increasing its versatility.

Terminal Finish: Gold (Au) - with Nickel (Ni) barrier

The gold terminal finish with nickel barrier provides excellent conductivity and corrosion resistance, ensuring long-term reliability and performance.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wide band low power device, this amplifier offers flexibility in covering a broad frequency range while consuming minimal power, making it energy efficient.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohm, this amplifier is compatible with standard RF components, simplifying integration into existing systems.

Gain: 18 dB

The 18 dB gain boosts the input signal strength, enhancing the overall signal quality and improving system performance.

Minimum Operating Frequency: 7000 MHz

With a minimum operating frequency of 7000 MHz, this amplifier is suitable for applications that require amplification in the higher frequency range.

Maximum Operating Frequency: 17000 MHz

The amplifier's maximum operating frequency of 17000 MHz allows it to cover a wide frequency range, making it versatile for various RF and microwave applications.

Technical Specifications

RF & Microwave Amplifiers HMC-C016 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Additional Features:

SMA-F, LOW NOISE

Characteristic Impedance:

50 ohm

Construction:

COAXIAL

Gain:

18 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e4

Maximum Operating Frequency:

17000 MHz

Minimum Operating Frequency:

7000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-55 Cel

RF or Microwave Device Type:

Terminal Finish:

Gold (Au) - with Nickel (Ni) barrier

Trade Compliance

HMC-C016 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8543.70.80.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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