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HMC-C038

Analog Devices

HMC-C038 by Analog Devices

Analog Devices' HMC-C038 is a COAXIAL RF amplifier with 6 dB gain, operating from 2-35 GHz. It can handle up to 23 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for wideband low-power applications in temperatures ranging from -55°C to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,605 parts In-Stock

1+ parts

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6,605

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Digiode

USA . 476 parts In-Stock

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476

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,812 parts In-Stock

1+ parts

$1.726

100+ parts

-

1k+ parts

$1.605

10k+ parts

-

1,812

$1.726

-

$1.605

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IDEA Electronic Components Group

UK . 858 parts In-Stock

1+ parts

$1.856

100+ parts

-

1k+ parts

$1.763

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858

$1.856

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$1.763

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Ampacity Inc.

Singapore . 1,030 parts In-Stock

1+ parts

$2.000

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-

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1,030

$2.000

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DigiPath Technology Company

USA . 1,080 parts In-Stock

1+ parts

$2.895

100+ parts

$2.780

1k+ parts

-

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1,080

$2.895

$2.780

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One Stop Electronics

USA . 635 parts In-Stock

1+ parts

$5.000

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635

$5.000

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AZTECH Wire

Italy . 258 parts In-Stock

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$6.587

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258

$6.587

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Semicontronic

India . 782 parts In-Stock

1+ parts

$32.000

100+ parts

$31.200

1k+ parts

$31.040

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782

$32.000

$31.200

$31.040

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Corphita

USA . 955 parts In-Stock

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955

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Overview

Elevate your RF and microwave amplifier game with the HMC-C038 by Analog Devices. Known for their superior quality and reliability, Analog Devices delivers top-notch products like the HMC-C038 that offer exceptional performance in a wide range of applications. Whether you're looking to boost signal strength or improve overall system efficiency, this wide band low-power amplifier with a maximum input power of 23 dBm and a gain of 6 dB is the perfect solution. Trust Analog Devices to provide you with the cutting-edge technology you need to stay ahead of the curve.

Feature Benefit Bullets

Maximum Input Power (CW): 23 dBm

High maximum input power allows for reliable operation without the risk of damaging the amplifier, making it suitable for demanding applications.

Construction: COAXIAL

Coaxial construction ensures efficient signal transmission and reduces interference, providing stable performance in RF and microwave applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this amplifier can withstand harsh environmental conditions, increasing its reliability and longevity.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature enables this amplifier to function in extreme cold environments, making it versatile for a wide range of applications.

Terminal Finish: Gold (Au) - with Nickel (Ni) barrier

Gold terminal finish with a nickel barrier offers excellent conductivity and corrosion resistance, ensuring optimal signal transmission and maintaining performance over time.

RF or Microwave Device Type: WIDE BAND LOW POWER

Wide band low power design allows for amplification of signals across a broad frequency range with low power consumption, making it suitable for various communication applications.

Characteristic Impedance: 50 ohm

With a standard impedance value of 50 ohms, this amplifier is compatible with most RF and microwave systems, ensuring easy integration and reliable performance.

Gain: 6 dB

A moderate gain of 6 dB boosts signal strength without introducing excessive noise, improving the overall performance of the amplifier in signal transmission.

Minimum Operating Frequency: 2000 MHz

Low minimum operating frequency allows for amplification of signals starting from 2000 MHz, making it suitable for a wide range of RF and microwave communication systems.

Maximum Operating Frequency: 35000 MHz

High maximum operating frequency enables amplification of signals up to 35000 MHz, making it suitable for applications requiring amplification in higher frequency bands.

Technical Specifications

RF & Microwave Amplifiers HMC-C038 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COAXIAL

Gain:

6 dB

Maximum Input Power (CW):

23 dBm

JESD-609 Code:

e4

Maximum Operating Frequency:

35000 MHz

Minimum Operating Frequency:

2000 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-55 Cel

RF or Microwave Device Type:

Terminal Finish:

Gold (Au) - with Nickel (Ni) barrier

Trade Compliance

HMC-C038 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8543.70.80.00

SB

8543.70.80.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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