Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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AOB25S65L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 650V DS Breakdown Voltage. It has a max ID of 25A and 0.19 ohm Drain-Source On Resistance. Ideal for SWITCHING applications, this SINGLE transistor features a BUILT-IN DIODE and operates in ENHANCEMENT MODE.
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The use of plastic/epoxy material makes this FET lightweight and durable, ideal for various applications.
N-channel FETs typically have higher mobility and lower on-resistance, making them efficient for switching applications.
The built-in diode allows for easy protection against reverse current flow, enhancing the FET's reliability.
Designed specifically for switching applications, this FET offers fast switching speeds and low power consumption.
Being surface-mountable, this FET is easy to integrate onto PCBs, saving space and simplifying assembly.
With a high breakdown voltage, this FET can handle high voltage applications without risk of damage.
The rectangular package shape provides a compact design, suitable for applications with limited space.
The gull wing terminals offer a secure connection and easy soldering, ensuring reliable performance.
The enhancement mode operation allows for precise control of the FET's conductivity, improving efficiency and performance.
The high pulsed drain current rating makes this FET suitable for applications requiring brief high-current pulses.
With a high avalanche energy rating, this FET can withstand transient voltage spikes, improving overall reliability.
Having only 2 terminals simplifies the FET's integration into circuits, reducing complexity and potential points of failure.
The small outline package style is space-efficient and easy to handle, making the FET suitable for compact designs.
The MOSFET technology offers high performance and low power consumption, making this FET an energy-efficient choice.
Silicon transistors are known for their reliability and stability, ensuring consistent performance over time.
With a high maximum drain current rating, this FET can handle high current loads with ease.
The low on-resistance of this FET results in minimal voltage drop and power loss, improving overall efficiency.
The single terminal position simplifies installation and connection, reducing the risk of errors in circuit design.
The drain connection configuration allows for easy heat dissipation, ensuring optimal performance and reliability.
Power Field Effect Transistors (FET) AOB25S65L attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Alpha & Omega Semiconductor
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JESD-30 Code:
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AOB25S65L Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev Assem/Test Chg 19/Jul/2018
Alpha and Omega Semiconductor is committed to excellence in design, manufacturing, and responsiveness to our customers through the continued development of new technologies, products and innovative solutions. We bring to the market devices designed to benefit our customers by meeting their product specific needs. Our mission is to bring value to our customers, shareholders and employees. We pride ourself in our expertise in all areas of power semiconductor technology and business operations. Our intellectual property and technical knowledge encompasses the latest advancements in the power semiconductor industry. AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high performance power management solutions. AOS's portfolio of products targets high-volume applications, including but not limited to portable computers, flat panel TVs, LED lighting, smart phones, battery packs, consumer and industrial motor controls and power supplies for TVs, computers, servers and telecommunications equipment.
2902037
Phoenix Contact
MODULAR TERMINAL BLOCK;
C0603X104K5RACAUTO
KEMET Corporation
C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.
BAV99WT1G
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
General Semiconductor
2N2222A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
LM358N
Freescale Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
M39029/58-360
Amphenol
CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM317BD2TG
Onsemi
LM317BD2TG by Onsemi is an adjustable positive single output standard regulator with a max output current of 1.5A and a max load regulation of 5.8%. Operating temperature ranges from -40 to 125°C, making it suitable for various applications requiring precise voltage regulation in compact designs.
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
LM555CN
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
IRLML6402TRPBF
Infineon Technologies
IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
Ksl Microdevices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
RC0603FR-0710KL
Yageo
Yageo's RC0603FR-0710KL is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. It operates b/w -55 to 155 °C and is ideal for surface mount applications in electronics requiring precise resistance values.
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;
1N4148
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138BK,215
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
CRCW080510R0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
Comset Semiconductors
IRF540SPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): SMALL OUTLINE;
IRLL014NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY;
IRF530PBF
Vishay Intertechnology's IRF530PBF is a N-CHANNEL FET with 100V DS Breakdown Voltage and 56A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 88W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C.
IRFP460APBF
Vishay Intertechnology's IRFP460APBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 280W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
IRFS4410ZTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
SI7431DP-T1-GE3
Vishay Intertechnology's SI7431DP-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 200V DS breakdown voltage, 30A pulsed drain current, and 0.174 ohm max on-resistance. Ideal for high-power applications requiring efficient switching with a max operating temperature of 150°C.
IRF9358TRPBF
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 210 mJ;
IPB010N06NATMA1
Infineon's IPB010N06NATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Features include 720A pulsed drain current, 1600mJ avalanche energy rating, and 0.001 ohm max on-resistance. With a max power dissipation of 300W and operating temp up to 175°C, it's suitable for high-power circuits in various industries.
FDS6890A
FDS6890A by Onsemi is an N-CHANNEL Power FET with 20V DS Breakdown Voltage and 0.034 ohm RDS(ON). It features 2 elements with built-in diode, suitable for SWITCHING applications. This small outline transistor has a max operating temperature of 150°C and can handle up to 20A pulsed drain current.
IRF7328TRPBF
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 8 A; Maximum Operating Temperature: 150 Cel;
IPB017N10N5LFATMA1
Infineon's IPB017N10N5LFATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 720A IDM, and 0.0017 ohm RDS(on). Ideal for power applications requiring high current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its high power dissipation of 313W and wide operating temperature range (-55 to 150 °C).
FDBL86062-F085
FDBL86062-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 429W.
IRF9540NPBF
IRF9540NPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 76A Max Pulsed Drain Current, 430mJ Avalanche Energy Rating, and 0.117 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 175°C, making it suitable for high-power circuits.
IRF7425TRPBF
IRF7425TRPBF by Infineon Technologies is a P-CHANNEL FET with 20V DS Breakdown Voltage, 15A Drain Current, and 0.0082 ohm On Resistance. Ideal for SWITCHING applications, it features a built-in diode in a RECTANGULAR package with GULL WING terminals. Operating in ENHANCEMENT MODE, it can handle up to 60A Pulsed Drain Current.
IRLML2502GTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 33 A;
FDS4559
FDS4559 by Onsemi is a Power FET with N-Channel and P-Channel types, ideal for switching applications. It features a 60V min DS breakdown voltage, 20A max pulsed drain current, and 0.055 ohm max drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 175°C.
IRFB4110PBF
IRFB4110PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 670A and EAS of 190mJ, with a Drain Current (ID) of 180A. Operating in ENHANCEMENT MODE, it has a max power dissipation of 370W at 175°C.
DMP3098L-7
Diodes Incorporated
DMP3098L-7 by Diodes Inc. is a P-channel power FET with a min DS breakdown voltage of 30V and max pulsed drain current of 11A. It is used for switching applications and operates in enhancement mode.
DMPH3010LK3-13
Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
BSP89H6327XTSA1
Infineon's BSP89H6327XTSA1 is a N-CHANNEL Power FET with 240V DS Breakdown Voltage. It features 1.4A IDM, 0.35A ID, and 6ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance and small outline package style.
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AOB290L
Alpha & Omega Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
AOB2606L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 115 W; JEDEC-95 Code: TO-263AB; Package Style (Meter): SMALL OUTLINE;
AOB2618L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41.5 W; Avalanche Energy Rating (EAS): 26 mJ; No. of Elements: 1;
AOB284L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 211 mJ; Terminal Position: SINGLE;
AOB282L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272.5 W; Terminal Position: SINGLE; Minimum DS Breakdown Voltage: 80 V;
AOB288L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 93.5 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
AOB2910L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (ID): 30 A;
AOB29S50
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 357 W; Terminal Position: SINGLE; Transistor Application: SWITCHING;
AOB29S50L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 357 W; Package Shape: RECTANGULAR; No. of Terminals: 2;
AOB270AL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Application: SWITCHING; Maximum Feedback Capacitance (Crss): 97 pF;
AOB254L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
AOB2904
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 326 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .0052 ohm;
AOB20S60L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 266 W; Minimum DS Breakdown Voltage: 600 V; No. of Elements: 1;
AOB20S60
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 266 W; Case Connection: DRAIN; Avalanche Energy Rating (EAS): 188 mJ;
AOB25S65
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Form: GULL WING;
AOB2918L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 267 W; Minimum DS Breakdown Voltage: 100 V; Maximum Drain-Source On Resistance: .007 ohm;
AOB298L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-G2;
AOB280A60L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 156 W; JESD-30 Code: R-PSSO-G2; No. of Terminals: 2;
AOB292L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Terminal Form: GULL WING; Minimum DS Breakdown Voltage: 100 V;
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