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Texas Instruments Small Signal Field Effect Transistors (FET) 8

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
TPIC2322LD by Texas Instruments

TPIC2322LD

Texas Instruments

TPIC2322LD by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 3 ELEMENTS with BUILT-IN DIODE, 0.75A Max Drain Current, and 0.7 ohm Drain-Source On Resistance. With a 60V DS Breakdown Voltage, it operates in ENHANCEMENT MODE at up to 150°C.

LOGIC LEVEL COMPATIBLE

ISOLATED

COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE

60 V

.75 A

.75 A

.7 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

MS-012AA

R-PDSO-G8

3

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.95 W

.95 W

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

TPS1101DR by Texas Instruments

TPS1101DR

Texas Instruments

TPS1101DR by Texas Instruments is a P-CHANNEL FET for switching applications. It features a min DS Breakdown Voltage of 15V, Max Drain Current of 2.3A, and Max Power Dissipation of 0.791W. With a package style of SMALL OUTLINE and operating temperature range from -40 to 150 °C, it is ideal for enhancement mode switching in various electronic devices.

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

ISOLATED

SINGLE WITH BUILT-IN DIODE

15 V

.62 A

2.3 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e4

1

1

8

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.791 W

.791 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

30

SWITCHING

SILICON

TPIC1502DW by Texas Instruments

TPIC1502DW

Texas Instruments

TPIC1502DW by Texas Instruments is a N-CHANNEL FET with 1.5A max drain current, 0.3 ohm max on resistance, and 11 elements. It is used as an amplifier in various applications due to its small outline package style and dual terminal position.

COMPLEX

1.5 A

.005 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G24

11

24

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

AMPLIFIER

SILICON

CSD75205W1015 by Texas Instruments

CSD75205W1015

Texas Instruments

CSD75205W1015 by Texas Instruments is a P-CHANNEL FET for SWITCHING applications. Features include 20V DS Breakdown Voltage, 1.2A Drain Current, and 0.18ohm On Resistance. With a max operating temperature of 150°C, it's ideal for high-performance electronic devices requiring efficient power management.

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

1.2 A

1.2 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

33 pF

R-XBGA-B6

2

6

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

GRID ARRAY

NOT SPECIFIED

P-CHANNEL

.75 W

Not Qualified

Other Transistors

YES

BALL

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

CSD25301W1015 by Texas Instruments

CSD25301W1015

Texas Instruments

CSD25301W1015 by Texas Instruments is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package, suitable for surface mount assembly at temperatures up to 150°C.

SINGLE WITH BUILT-IN DIODE

20 V

2.2 A

2.2 A

.22 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PBGA-B6

e1

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

260

P-CHANNEL

1.5 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON

CSD13302WT by Texas Instruments

CSD13302WT

Texas Instruments

CSD13302WT by Texas Instruments is a N-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 29A IDM, 0.0285 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.8W and operating temperature up to 150°C, it offers reliable performance in various electronic devices.

ULTRA LOW RESISTANCE

SINGLE WITH BUILT-IN DIODE

12 V

1.6 A

.0285 ohm

METAL-OXIDE SEMICONDUCTOR

196 pF

S-PBGA-B4

e1

1

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

N-CHANNEL

1.8 W

29 A

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON

JFE150DCKT by Texas Instruments

JFE150DCKT

Texas Instruments

JFE150DCKT by Texas Instruments is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it has a max temp of 125°C and min of -40°C. With 5 terminals and built-in diode, it's surface mountable with PLASTIC/EPOXY body.

SINGLE WITH BUILT-IN DIODE

40 V

JUNCTION

7 pF

R-PDSO-G5

e3

1

1

5

DEPLETION MODE

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

JFE150DBVT by Texas Instruments

JFE150DBVT

Texas Instruments

JFE150DBVT by Texas Instruments is a N-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for amplifier applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in DEPLETION MODE, this transistor has a max temperature of 125°C and feedback capacitance of 7pF.

SINGLE WITH BUILT-IN DIODE

40 V

JUNCTION

7 pF

R-PDSO-G5

1

5

DEPLETION MODE

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

GULL WING

DUAL

AMPLIFIER

SILICON