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86.2 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTMFS4833NST1G by Onsemi

NTMFS4833NST1G

Onsemi

NTMFS4833NST1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 156A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 86.2W. The transistor features a built-in diode, current sensor, and Kelvin sensor in an 8-terminal package suitable for surface mount technology.

SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR

30 V

156 A

16 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

86.2 W

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFS4833NST3G by Onsemi

NTMFS4833NST3G

Onsemi

NTMFS4833NST3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 16A and 86.2W power dissipation in a small outline package style. Operating at up to 150 °C, it offers high performance in various electronic devices.

SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR

30 V

156 A

16 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

86.2 W

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON

NTMFS4854NST1G by Onsemi

NTMFS4854NST1G

Onsemi

NTMFS4854NST1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 149A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, current sensor, and operates in ENHANCEMENT MODE. With a max power dissipation of 86.2W and operating temperature up to 150 °C, this transistor is suitable for high-power electronic systems.

SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR

25 V

149 A

15.2 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

86.2 W

FET General Purpose Power

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

NTMFS4854NST3G by Onsemi

NTMFS4854NST3G

Onsemi

NTMFS4854NST3G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 149A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 86.2W. The transistor features a built-in diode, current sensor, and Kelvin sensor in an 8-terminal package suitable for surface mount assembly.

SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR

25 V

149 A

15.2 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

86.2 W

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SWITCHING

SILICON