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3.8 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTLUS3A18PZTAG by Onsemi

NTLUS3A18PZTAG

Onsemi

NTLUS3A18PZTAG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 8.2A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a SQUARE package suitable for SURFACE MOUNT technology.

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

8.2 A

5.1 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

3.8 W

Other Transistors

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

NTLUS3A18PZTBG by Onsemi

NTLUS3A18PZTBG

Onsemi

NTLUS3A18PZTBG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 8.2A Drain Current, and 0.018 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150 °C temperature.

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

8.2 A

5.1 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

3.8 W

Other Transistors

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

NTLUS3A18PZCTAG by Onsemi

NTLUS3A18PZCTAG

Onsemi

NTLUS3A18PZCTAG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as automotive electronics and industrial control systems.

SINGLE

8.2 A

8.2 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

P-CHANNEL

3.8 W

Other Transistors

YES

TIN

30

NTLUS3A18PZCTBG by Onsemi

NTLUS3A18PZCTBG

Onsemi

NTLUS3A18PZCTBG by Onsemi is a P-CHANNEL FET with 8.2A max drain current and 3.8W power dissipation. Ideal for applications requiring high-power handling in surface-mount configurations, such as automotive electronics or power management systems.

SINGLE

8.2 A

8.2 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

P-CHANNEL

3.8 W

Other Transistors

YES

TIN

30