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1.8 W Small Signal Field Effect Transistors (FET) 7

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FDR6580 by Fairchild Semiconductor

FDR6580

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE;

SINGLE WITH BUILT-IN DIODE

20 V

11 A

11.2 A

.009 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.8 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

FDR6674A by Fairchild Semiconductor

FDR6674A

Fairchild Semiconductor

FDR6674A by Fairchild Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 11.5A Drain Current, 0.008 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max power dissipation of 1.8W and can withstand temperatures up to 150°C.

SINGLE WITH BUILT-IN DIODE

30 V

11.5 A

11.5 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.8 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

2N4392-E3 by Vishay Intertechnology

2N4392-E3

Vishay Intertechnology

2N4392-E3 by Vishay Intertechnology is a N-CHANNEL FET with 3 terminals, operating in DEPLETION MODE. It has a max power dissipation of 1.8W and drain-source on resistance of 60 ohm. Ideal for SWITCHING applications due to its low feedback capacitance of 3.5pF and temperature range from -55°C to 200°C.

LOW INSERTION LOSS

GATE

SINGLE

60 ohm

JUNCTION

3.5 pF

TO-206AA

O-MBCY-W3

e3

1

1

3

DEPLETION MODE

200 Cel

-55 Cel

METAL

ROUND

CYLINDRICAL

260

N-CHANNEL

1.8 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

WIRE

BOTTOM

30

SWITCHING

SILICON

FDC6000NZ_F077 by Fairchild Semiconductor

FDC6000NZ_F077

Fairchild Semiconductor

Fairchild Semiconductor's FDC6000NZ_F077 is a N-CHANNEL FET with 20V DS Breakdown Voltage, 7.3A ID, and 0.02 ohm RDS(on). Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, ENHANCEMENT MODE operation, and dual elements with built-in diode.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

7.3 A

7.3 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e4

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.8 W

Not Qualified

FET General Purpose Power

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

FLAT

DUAL

SWITCHING

SILICON

2N4393-E3 by Vishay Intertechnology

2N4393-E3

Vishay Intertechnology

2N4393-E3 by Vishay Intertechnology is a N-CHANNEL FET with 1.8W power dissipation, -55 to 200 °C operating temp range, and 100 ohm max drain-source resistance. Ideal for switching applications due to its DEPLETION MODE operation and low feedback capacitance of 3.5 pF.

LOW INSERTION LOSS

GATE

SINGLE

100 ohm

JUNCTION

3.5 pF

TO-206AA

O-MBCY-W3

e3

1

1

3

DEPLETION MODE

200 Cel

-55 Cel

METAL

ROUND

CYLINDRICAL

260

N-CHANNEL

1.8 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

WIRE

BOTTOM

30

SWITCHING

SILICON

SPN02N60C3 by Infineon Technologies

SPN02N60C3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Finish: MATTE TIN; Minimum DS Breakdown Voltage: 600 V;

SINGLE WITH BUILT-IN DIODE

600 V

.4 A

.4 A

2.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

e3

3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.8 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SILICON

CSD13302WT by Texas Instruments

CSD13302WT

Texas Instruments

CSD13302WT by Texas Instruments is a N-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 29A IDM, 0.0285 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.8W and operating temperature up to 150°C, it offers reliable performance in various electronic devices.

ULTRA LOW RESISTANCE

SINGLE WITH BUILT-IN DIODE

12 V

1.6 A

.0285 ohm

METAL-OXIDE SEMICONDUCTOR

196 pF

S-PBGA-B4

e1

1

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

N-CHANNEL

1.8 W

29 A

YES

TIN SILVER COPPER

BALL

BOTTOM

30

SWITCHING

SILICON