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.8 W Small Signal Field Effect Transistors (FET) 11

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MCH3375-TL-H by Onsemi

MCH3375-TL-H

Onsemi

MCH3375-TL-H by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 1.6A Drain Current, and 0.295 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. Package: PLASTIC/EPOXY, Surface Mountable RECTANGULAR shape with FLAT terminals.

SINGLE WITH BUILT-IN DIODE

30 V

1.6 A

1.6 A

.295 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e6

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.8 W

Other Transistors

YES

TIN BISMUTH

FLAT

DUAL

30

SWITCHING

SILICON

MCH3376-TL-E by Onsemi

MCH3376-TL-E

Onsemi

MCH3376-TL-E by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 0.8W power dissipation. Ideal for applications requiring surface mount technology, such as in METAL-OXIDE SEMICONDUCTOR circuits operating up to 150 °C.

SINGLE

1.5 A

1.5 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

150 Cel

260

P-CHANNEL

.8 W

Other Transistors

YES

TIN BISMUTH

30

SSM3K121TU by Toshiba

SSM3K121TU

Toshiba

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;

SINGLE WITH BUILT-IN DIODE

20 V

3.2 A

3.2 A

.14 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.8 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

MCH3376-TL-W by Onsemi

MCH3376-TL-W

Onsemi

MCH3376-TL-W by Onsemi is a P-CHANNEL FET with 1.5A max drain current and 0.8W max power dissipation. Ideal for surface mount applications, it operates up to 150 °C and features metal-oxide semiconductor technology.

SINGLE

1.5 A

1.5 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

150 Cel

260

P-CHANNEL

.8 W

Other Transistors

YES

TIN BISMUTH

30

MMFT2955ET1G by Onsemi

MMFT2955ET1G

Onsemi

MMFT2955ET1G by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and 0.3 ohm max drain-source resistance. Operating in enhancement mode, it has a max drain current of 1.2A and can handle up to 0.8W power dissipation at 150 °C.

AVALANCHE RATED

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

1.2 A

1.2 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e3

3

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.8 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

MMFT960T1G by Onsemi

MMFT960T1G

Onsemi

MMFT960T1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.3A and power dissipation of 0.8W, it offers reliable performance in small outline packages at temperatures up to 150 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

.3 A

.3 A

1.7 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.8 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

RSF010P03TL by ROHM

RSF010P03TL

ROHM

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .35 ohm;

SINGLE WITH BUILT-IN DIODE

30 V

1 A

1 A

.35 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e2

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.8 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

RTF015N03TL by ROHM

RTF015N03TL

ROHM

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;

SINGLE WITH BUILT-IN DIODE

30 V

1.5 A

1.5 A

.34 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e2

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.8 W

Not Qualified

FET General Purpose Power

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

MCH6662-TL-W by Onsemi

MCH6662-TL-W

Onsemi

MCH6662-TL-W by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode. It has a max drain current of 2A, on resistance of 0.16 ohm, and operates in enhancement mode. Ideal for small outline applications requiring high power dissipation up to 0.8W at 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2 A

.16 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e6

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.8 W

YES

TIN BISMUTH

FLAT

DUAL

30

SILICON

MCH3481-TL-W by Onsemi

MCH3481-TL-W

Onsemi

MCH3481-TL-W by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.8W Power Dissipation, and 2A Drain Current. Ideal for SWITCHING applications in small outline packages, it operates at up to 150 °C with a 0.104 ohm On Resistance.

SINGLE WITH BUILT-IN DIODE

20 V

2 A

.104 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e6

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.8 W

YES

TIN BISMUTH

FLAT

DUAL

30

SWITCHING

SILICON

DMC2710UV-13 by Diodes Incorporated

DMC2710UV-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain Current (ID): 1.1 A; Terminal Position: DUAL;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

1.1 A

.4 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

.8 W

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON