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.73 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTMS3P03R2 by Onsemi

NTMS3P03R2

Onsemi

NTMS3P03R2 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features a 30V DS Breakdown Voltage, 3.86A Drain Current, and 0.085 ohm On Resistance. With a max operating temperature of 150 °C, this MOSFET in PLASTIC/EPOXY package is ideal for high-power switching circuits.

AVALANCHE RATED

SINGLE WITH BUILT-IN DIODE

30 V

3.86 A

2.34 A

.085 ohm

METAL-OXIDE SEMICONDUCTOR

135 pF

R-PDSO-G8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.73 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn80Pb20)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NTR4503NT1 by Onsemi

NTR4503NT1

Onsemi

NTR4503NT1 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.5A Drain Current, 0.11 ohm On Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150 °C operating temperature.

SINGLE WITH BUILT-IN DIODE

30 V

1.5 A

1.5 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

TO-236AB

R-PDSO-G3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.73 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTR4503NT3G by Onsemi

NTR4503NT3G

Onsemi

NTR4503NT3G by Onsemi is a small signal FET with N-channel polarity and single configuration. It has a min DS breakdown voltage of 30V, max drain current of 2A, and max power dissipation of 0.73W. Ideal for switching applications, this MOSFET operates in enhancement mode with a max operating temperature of 150 °C.

SINGLE WITH BUILT-IN DIODE

30 V

2 A

1.5 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

TO-236AB

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.73 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTMS3P03R2G by Onsemi

NTMS3P03R2G

Onsemi

NTMS3P03R2G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.86A, 0.085 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a peak reflow temp of 260 °C and small outline package style, it offers high performance in various electronic devices.

AVALANCHE RATED

SINGLE WITH BUILT-IN DIODE

30 V

3.86 A

2.34 A

.085 ohm

METAL-OXIDE SEMICONDUCTOR

135 pF

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.73 W

Not Qualified

Other Transistors

YES

Tin (Sn)

GULL WING

DUAL

40

SWITCHING

SILICON