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.6 W Small Signal Field Effect Transistors (FET) 8

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
6HP04MH-TL-W by Onsemi

6HP04MH-TL-W

Onsemi

6HP04MH-TL-W by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage. It features SINGLE configuration with built-in diode and resistor, suitable for surface mount applications. With 0.37A ID and 4.2Ω RDS(on), it's ideal for small outline packages in enhancement mode circuits.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

60 V

.37 A

4.2 ohm

METAL-OXIDE SEMICONDUCTOR

4.1 pF

R-PDSO-F3

e6

1

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

.6 W

YES

TIN BISMUTH

FLAT

DUAL

30

SILICON

6HP04CH-TL-W by Onsemi

6HP04CH-TL-W

Onsemi

6HP04CH-TL-W by Onsemi is a P-CHANNEL FET with 0.37A max drain current and 0.6W power dissipation. Ideal for applications requiring surface mount technology, it operates at up to 150 °C and features TIN BISMUTH terminal finish.

SINGLE

.37 A

.37 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

150 Cel

260

P-CHANNEL

.6 W

Other Transistors

YES

TIN BISMUTH

30

DMN2170U-7 by Diodes Incorporated

DMN2170U-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

20 V

2.3 A

2.3 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

34 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.6 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN2230U-7 by Diodes Incorporated

DMN2230U-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 20 V;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

20 V

2 A

2 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

30 pF

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.6 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

NTHD5904T1 by Onsemi

NTHD5904T1

Onsemi

NTHD5904T1 by Onsemi is a N-CHANNEL FET with 2 elements & built-in diode. It has a max drain current of 3.1A, on-resistance of 0.075 ohm, and operates in enhancement mode for switching applications. This small outline transistor can handle up to 150 °C operating temperature, making it suitable for various electronic devices.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

3.1 A

3.1 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.6 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTHD5905T1 by Onsemi

NTHD5905T1

Onsemi

NTHD5905T1 by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode for switching applications. Features include 8V DS breakdown voltage, 3A max drain current, and 0.09 ohm max on resistance. Ideal for small outline packages in enhancement mode operation up to 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8 V

3 A

3 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

.6 W

Not Qualified

Other Transistors

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTTS2P03R2 by Onsemi

NTTS2P03R2

Onsemi

NTTS2P03R2 by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It features a max ID of 2.1A, 0.085 ohm RDS(on), and operates in enhancement mode. With a small outline package style and GULL WING terminals, it offers high performance in compact designs at up to 150°C.

SINGLE WITH BUILT-IN DIODE

30 V

2.1 A

2.1 A

.085 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-G8

e0

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

235

P-CHANNEL

.6 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DMN2710UW-13 by Diodes Incorporated

DMN2710UW-13

Diodes Incorporated

DMN2710UW-13 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage, 0.9A max drain current, and 0.45 ohm max on-resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C. This small outline package features a built-in diode and matte tin terminal finish.

SINGLE WITH BUILT-IN DIODE

20 V

.9 A

.45 ohm

METAL-OXIDE SEMICONDUCTOR

6.5 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.6 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON