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COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 8

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PMWD20XN,118 by NXP Semiconductors

PMWD20XN,118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

10.4 A

.022 ohm

METAL-OXIDE SEMICONDUCTOR

MO-153

R-PDSO-G8

2

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

NTQD6866R2 by Onsemi

NTQD6866R2

Onsemi

NTQD6866R2 by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 6.9A max drain current, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 0.032ohm max on resistance and can handle up to 0.78W power dissipation at 150 °C.

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

6.9 A

4.7 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

175 pF

R-PDSO-G8

e0

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

.78 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

STC5NF30V by STMicroelectronics

STC5NF30V

STMicroelectronics

STC5NF30V by STMicroelectronics is an N-channel FET designed for switching applications. It features a max drain current of 5 A, a breakdown voltage of 30 V, and operates in enhancement mode. Ideal for compact designs with its surface mount configuration.

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

5 A

5 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.5 W

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

NTQD6866R2G by Onsemi

NTQD6866R2G

Onsemi

NTQD6866R2G by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 6.9A max drain current, ideal for switching applications. Featuring common drain configuration, it has 2 elements with built-in diode in a small outline package style, operating at up to 150 °C.

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

6.9 A

4.7 A

.032 ohm

METAL-OXIDE SEMICONDUCTOR

175 pF

R-PDSO-G8

e3

3

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.78 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN2008LFU-13 by Diodes Incorporated

DMN2008LFU-13

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e4;

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

14.5 A

.0096 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N6

e4

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

DMN2010UDZ-7 by Diodes Incorporated

DMN2010UDZ-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; No. of Elements: 2; Maximum Operating Temperature: 150 Cel;

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

24 V

11 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

311 pF

R-PDSO-N6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.6 W

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMN2012UCA6-7 by Diodes Incorporated

DMN2012UCA6-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Package Body Material: UNSPECIFIED; Terminal Finish: NICKEL PALLADIUM GOLD;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

24 V

METAL-OXIDE SEMICONDUCTOR

102 pF

R-XBCC-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

N-CHANNEL

2.3 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON

DMN16M0UCA6-7 by Diodes Incorporated

DMN16M0UCA6-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; No. of Elements: 2; Package Body Material: UNSPECIFIED;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

.0059 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N6

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

N-CHANNEL

2.6 W

YES

NICKEL PALLADIUM GOLD/NICKEL GOLD

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON