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Diodes Incorporated Small Signal Bipolar Junction Transistors (BJT) 564

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DSS4140V-7 by Diodes Incorporated

DSS4140V-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

75

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

150 MHz

DSS4220V-7 by Diodes Incorporated

DSS4220V-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 2 A;

2 A

20 V

SINGLE

120

R-PDSO-F6

e3

1

1

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.6 W

.6 W

Not Qualified

YES

MATTE TIN

FLAT

DUAL

30

SILICON

260 MHz

.35 V

DSS5140V-7 by Diodes Incorporated

DSS5140V-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;

1 A

40 V

SINGLE

160

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

150 MHz

DVRN6056-7-F by Diodes Incorporated

DVRN6056-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

.6 A

40 V

SINGLE WITH BUILT-IN DIODE

40

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

255 ns

35 ns

DRDN005W-7 by Diodes Incorporated

DRDN005W-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Peak Reflow Temperature (C): 260;

.5 A

80 V

SINGLE

100

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

DRDN010W-7 by Diodes Incorporated

DRDN010W-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified;

1 A

18 V

SINGLE

150

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

DRDNB26W-7 by Diodes Incorporated

DRDNB26W-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .6 A;

.6 A

50 V

SINGLE WITH BUILT-IN RESISTOR

47

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DRDPB16W-7 by Diodes Incorporated

DRDPB16W-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .6 A;

.6 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DRDPB26W-7 by Diodes Incorporated

DRDPB26W-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .6 A;

.6 A

50 V

SINGLE WITH BUILT-IN RESISTOR

47

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

DVR2V5W-7 by Diodes Incorporated

DVR2V5W-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): 1 A;

1 A

18 V

SINGLE WITH BUILT-IN DIODE

150

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

DVR3V3W-7 by Diodes Incorporated

DVR3V3W-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): 1 A;

1 A

18 V

SINGLE WITH BUILT-IN DIODE

150

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

DZT955-13 by Diodes Incorporated

DZT955-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 4 A;

COLLECTOR

4 A

140 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

2DA1213O-13 by Diodes Incorporated

2DA1213O-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

50 V

SINGLE

20

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

160 MHz

ZXTD2090E6TA by Diodes Incorporated

ZXTD2090E6TA

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 215 MHz; Maximum Power Dissipation (Abs): 1.7 W; Maximum Collector Current (IC): 1 A;

1 A

50 V

SEPARATE, 2 ELEMENTS

20

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.7 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

215 MHz

425 ns

150 ns

ZXTN26070CV-7 by Diodes Incorporated

ZXTN26070CV-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;

2 A

70 V

SINGLE

75

R-PDSO-F6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

200 MHz

2DA2018-7 by Diodes Incorporated

2DA2018-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A;

.5 A

12 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

260 MHz

DSS5240Y-7 by Diodes Incorporated

DSS5240Y-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 2 A;

2 A

40 V

SINGLE

100

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

220 MHz

DSS9110Y-7 by Diodes Incorporated

DSS9110Y-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1 A;

1 A

100 V

SINGLE

125

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC847BLD-7 by Diodes Incorporated

BC847BLD-7

Diodes Incorporated

Diodes Inc. BC847BLD-7 is a NPN BJT with 150 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal amplification in electronic circuits due to its 0.3W Ptot, 0.2A IC, and SOT-23 package with Gull Wing terminals. Suitable for applications requiring high gain and low power consumption in compact designs.

.2 A

45 V

SINGLE

150

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

ADTA114YUAQ-13 by Diodes Incorporated

ADTA114YUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA124ECAQ-13 by Diodes Incorporated

ADTA124ECAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

.1 A

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC144ECAQ-13 by Diodes Incorporated

ADTC144ECAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISITOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

FMMT416TA by Diodes Incorporated

FMMT416TA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;

.5 A

8 pF

100 V

SINGLE

100

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

40 MHz

.1 V

DSM80100M-7 by Diodes Incorporated

DSM80100M-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;

.5 A

80 V

SINGLE WITH BUILT-IN DIODE

120

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

MATTE TIN

GULL WING

DUAL

SILICON

DSM80101M-7 by Diodes Incorporated

DSM80101M-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDSO-G6; Minimum DC Current Gain (hFE): 120;

.5 A

80 V

SINGLE WITH BUILT-IN DIODE

120

R-PDSO-G6

e3

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

MATTE TIN

GULL WING

DUAL

SILICON

DDC144TH-7-F by Diodes Incorporated

DDC144TH-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-F6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

MATTE TIN

FLAT

DUAL

SILICON

250 MHz

ZDT694QTA by Diodes Incorporated

ZDT694QTA

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;

HIGH RELIABILITY

.5 A

120 V

SEPARATE, 2 ELEMENTS

150

R-PDSO-G8

e3

1

2

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

130 MHz

ZXTN4004ZQTA by Diodes Incorporated

ZXTN4004ZQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Terminal Form: FLAT; Package Shape: RECTANGULAR;

HIGH RELIABILITY

COLLECTOR

1 A

150 V

SINGLE

100

R-PSSO-F3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

ZTX751QSTZ by Diodes Incorporated

ZTX751QSTZ

Diodes Incorporated

ZTX751QSTZ by Diodes Inc. is a PNP BJT with 1.5W power dissipation, 100 min hFE, and 2A max IC. Ideal for applications requiring high current amplification in a single configuration at up to 200°C operating temperature.

2 A

SINGLE

100

e3

1

200 Cel

260

PNP

1.5 W

Other Transistors

NO

MATTE TIN

30

100 MHz

APT13003NZTR-G1 by Diodes Incorporated

APT13003NZTR-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1.5 A;

1.5 A

530 V

SINGLE

5

TO-92

O-PBCY-W3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

1 W

MIL-STD-202

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

4 MHz

4150 ns

1000 ns

.4 V

DMN61D9UDW-13 by Diodes Incorporated

DMN61D9UDW-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .41 W; Maximum Feedback Capacitance (Crss): 2.5 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.35 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

2.5 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.41 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN61D9UDW-7 by Diodes Incorporated

DMN61D9UDW-7

Diodes Incorporated

DMN61D9UDW-7 by Diodes Inc. is a N-CHANNEL BJT with 60V DS Breakdown Voltage, 0.35A ID, and 3.5 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, operating from -55 to 150 °C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.35 A

3.5 ohm

METAL-OXIDE SEMICONDUCTOR

2.5 pF

R-PDSO-G6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.41 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

ADA114EUQ-13 by Diodes Incorporated

ADA114EUQ-13

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTOR, HIGH RELIABILITY;

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADC124EUQ-13 by Diodes Incorporated

ADC124EUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA144ECAQ-7 by Diodes Incorporated

ADTA144ECAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA144EUAQ-13 by Diodes Incorporated

ADTA144EUAQ-13

Diodes Incorporated

ADTA144EUAQ-13 by Diodes Inc. is a PNP BJT with 50V VCEO, 0.1A IC, and 250MHz fT. It comes in a small outline package and has a built-in resistor for ease of use. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency.

HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

FMMT614QTC by Diodes Incorporated

FMMT614QTC

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Terminal Finish: MATTE TIN; Terminal Form: GULL WING;

HIGH RELIABILITY

.5 A

100 V

DARLINGTON

5000

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

AC857CWQ-7 by Diodes Incorporated

AC857CWQ-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

HIGH RELIABILITY

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

ADTA143XUAQ-13 by Diodes Incorporated

ADTA143XUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 2.13;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA143ZUAQ-13 by Diodes Incorporated

ADTA143ZUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SILICON

250 MHz

ADTC114YUAQ-13 by Diodes Incorporated

ADTC114YUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 4.7;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143TUAQ-13 by Diodes Incorporated

ADTC143TUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTOR;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143ZUAQ-13 by Diodes Incorporated

ADTC143ZUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

AC847BWQ-13 by Diodes Incorporated

AC847BWQ-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;

HIGH RELIABILITY

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

ACX114EUQ-13R by Diodes Incorporated

ACX114EUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ACX143ZUQ-13R by Diodes Incorporated

ACX143ZUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC143TUQ-13 by Diodes Incorporated

ADC143TUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC143ZUQ-13 by Diodes Incorporated

ADC143ZUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz