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280 MHz Small Signal Bipolar Junction Transistors (BJT) 5

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PMEM1505PG,115 by NXP Semiconductors

PMEM1505PG,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 280 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

.5 A

15 V

SINGLE WITH BUILT-IN DIODE

90

R-PDSO-G5

e3

1

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

280 MHz

2DD1664P-13 by Diodes Incorporated

2DD1664P-13

Diodes Incorporated

2DD1664P-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 1W, hFE of 82, and fT of 280MHz. Ideal for switching applications, it has a max collector-emitter voltage of 32V and max collector current of 1A. Suitable for surface mount with single terminal position in small outline package style.

COLLECTOR

1 A

32 V

SINGLE

82

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

280 MHz

BC212BG by Onsemi

BC212BG

Onsemi

BC212BG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1W, and hFE of 60. Ideal for amplifier applications, it has a max operating temp of 150 °C and VCE of 50V.

.1 A

50 V

SINGLE

60

TO-226AA

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

280 MHz

BC212BRL1G by Onsemi

BC212BRL1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 280 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .1 A;

EUROPEAN PART NUMBER

.1 A

50 V

SINGLE

60

TO-226AA

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON

280 MHz

BC239CG by Onsemi

BC239CG

Onsemi

BC239CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a min hFE of 380 and can handle a max collector current of 0.1 A. With a max operating temperature of 150 °C, it offers a nominal transition frequency of 280 MHz.

.1 A

25 V

SINGLE

380

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.35 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

280 MHz