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110 MHz Small Signal Bipolar Junction Transistors (BJT) 5

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FMMT717QTA by Diodes Incorporated

FMMT717QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Collector Current (IC): 2.5 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY

2.5 A

12 V

SINGLE

45

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

110 MHz

2SD2153T100V by ROHM

2SD2153T100V

ROHM

ROHM 2SD2153T100V is a NPN BJT transistor with max VCEsat of 0.5V, hFE of 820, and IC of 2A. Ideal for amplifier applications due to its high transition frequency of 110MHz and low power dissipation. Features single configuration in a small outline package suitable for surface mount technology.

COLLECTOR

2 A

25 V

SINGLE

820

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

.5 W

Not Qualified

Other Transistors

YES

Tin/Copper (Sn/Cu)

FLAT

SINGLE

10

AMPLIFIER

SILICON

110 MHz

.5 V

KSC1845FBU by Fairchild Semiconductor

KSC1845FBU

Fairchild Semiconductor

KSC1845FBU by Fairchild Semiconductor is a NPN BJT transistor with a min hFE of 300, ideal for amplifier applications. It has a max power dissipation of 0.5W and can operate at temperatures up to 150°C. The package style is cylindrical with matte tin terminal finish and through-hole terminal form.

LOW NOISE

.05 A

120 V

SINGLE

300

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

110 MHz

MMJT9435T1G by Onsemi

MMJT9435T1G

Onsemi

MMJT9435T1G by Onsemi is a PNP BJT with 3W power dissipation, hFE of 90, and max operating temp of 150 °C. Ideal for small outline applications requiring a collector-emitter voltage of 30V, collector current up to 3A, and transition frequency of 110MHz.

COLLECTOR

3 A

30 V

SINGLE

90

TO-261AA

R-PDSO-G4

e3

3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

110 MHz

MMJT9435T3G by Onsemi

MMJT9435T3G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

30 V

SINGLE

90

TO-261AA

R-PDSO-G4

e3

3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

110 MHz