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3 W Small Signal Bipolar Junction Transistors (BJT) 12

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCX6810E6327HTSA1 by Infineon Technologies

BCX6810E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

85

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

3 W

Other Transistors

YES

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCX6816E6327HTSA1 by Infineon Technologies

BCX6816E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

100

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

3 W

Other Transistors

YES

FLAT

SINGLE

AMPLIFIER

SILICON

100 MHz

BCX6825E6327HTSA1 by Infineon Technologies

BCX6825E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

20 V

SINGLE

160

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

3 W

Other Transistors

YES

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BCX6825H6327XTSA1 by Infineon Technologies

BCX6825H6327XTSA1

Infineon Technologies

BCX6825H6327XTSA1 by Infineon is a NPN BJT transistor with 3W power dissipation, hFE of 160, and 20V collector-emitter voltage. It's used as an amplifier in applications requiring a small outline package style for surface mount assembly.

COLLECTOR

1 A

20 V

SINGLE

160

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

3 W

AEC-Q101

Other Transistors

YES

Tin (Sn)

FLAT

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

MMJT9410T1G by Onsemi

MMJT9410T1G

Onsemi

MMJT9410T1G by Onsemi is a NPN BJT with 3W power dissipation, 30V max collector-emitter voltage, and 72MHz transition frequency. Ideal for small signal applications in electronics due to its high DC current gain and low collector current. Suitable for surface mount designs requiring compact packaging and efficient heat dissipation.

COLLECTOR

.01 A

30 V

SINGLE

60

R-PDSO-G3

e3

3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

72 MHz

DZT853-13 by Diodes Incorporated

DZT853-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 6 A;

COLLECTOR

6 A

100 V

SINGLE

20

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

130 MHz

DZT851-13 by Diodes Incorporated

DZT851-13

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 6 A;

COLLECTOR

6 A

60 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

130 MHz

DZT953-13 by Diodes Incorporated

DZT953-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

100 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

125 MHz

MMJT9410T1 by Onsemi

MMJT9410T1

Onsemi

MMJT9410T1 by Onsemi is a NPN BJT with 3W power dissipation, 30V max collector-emitter voltage, and 72MHz transition frequency. Ideal for small outline applications requiring high DC current gain and low collector current.

COLLECTOR

.01 A

30 V

SINGLE

60

R-PDSO-G3

e0

3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

30

SILICON

72 MHz

MMJT9435T1G by Onsemi

MMJT9435T1G

Onsemi

MMJT9435T1G by Onsemi is a PNP BJT with 3W power dissipation, hFE of 90, and max operating temp of 150 °C. Ideal for small outline applications requiring a collector-emitter voltage of 30V, collector current up to 3A, and transition frequency of 110MHz.

COLLECTOR

3 A

30 V

SINGLE

90

TO-261AA

R-PDSO-G4

e3

3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

110 MHz

MMJT9435T3G by Onsemi

MMJT9435T3G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

30 V

SINGLE

90

TO-261AA

R-PDSO-G4

e3

3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

3 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SILICON

110 MHz

2N1711PBFREE by Central Semiconductor

2N1711PBFREE

Central Semiconductor

2N1711PBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 1.5V, hFE of 40, and IC of 0.5A. Ideal for switching applications due to its high transition frequency of 70MHz and max power dissipation of 3W in a cylindrical package.

.5 A

25 pF

SINGLE

40

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

.8 W

3 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SWITCHING

SILICON

70 MHz

1.5 V