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.385 W Small Signal Bipolar Junction Transistors (BJT) 3

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NSVMUN5113DW1T3G by Onsemi

NSVMUN5113DW1T3G

Onsemi

NSVMUN5113DW1T3G by Onsemi is a PNP BJT with 2 elements, hFE of 80. It has 0.1A IC, 0.385W power dissipation, and matte tin finish. Ideal for small signal applications in electronics due to its silicon material and surface mount capability.

.1 A

80

e3

1

2

260

PNP

.385 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

NSB1706DMW5T1 by Onsemi

NSB1706DMW5T1

Onsemi

NSB1706DMW5T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It's ideal for switching applications with max VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly at peak reflow temp of 235 °C.

BUILT IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G5

e0

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.385 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

NSVMUN5333DW1T3G by Onsemi

NSVMUN5333DW1T3G

Onsemi

NSVMUN5333DW1T3G by Onsemi is a Small Signal BJT with NPN and PNP types. It features separate elements with built-in resistor, VCEsat of 0.25V, and hFE min of 80. Ideal for automotive applications due to AEC-Q101 standard compliance and max operating temperature of 150 °C.

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.385 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

.25 V