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1.5 A Small Signal Bipolar Junction Transistors (BJT) 19

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FMMT720-7 by Diodes Incorporated

FMMT720-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 190 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): 1.5 A;

1.5 A

25 pF

40 V

SINGLE

12

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.625 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

190 MHz

.33 V

STL73D-AP by STMicroelectronics

STL73D-AP

STMicroelectronics

STL73D-AP by STMicroelectronics is a NPN BJT transistor with 400V max collector-emitter voltage, 1.5A max collector current, and 1.5W max power dissipation. Ideal for switching applications due to its single configuration with built-in diode and fast turn-off time of 4700ns. Package style is cylindrical with matte tin terminal finish.

1.5 A

400 V

SINGLE WITH BUILT-IN DIODE

4

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

4700 ns

ZXTC2045E6QTA by Diodes Incorporated

ZXTC2045E6QTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 265 MHz; Maximum Collector Current (IC): 1.5 A; No. of Elements: 2;

HIGH RELIABILITY

1.5 A

30 V

SEPARATE, 2 ELEMENTS

180

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

265 MHz

FMMT722QTA by Diodes Incorporated

FMMT722QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .806 W; Maximum Collector Current (IC): 1.5 A;

HIGH RELIABILITY

1.5 A

70 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.806 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

2SCR554PFRAT100 by ROHM

2SCR554PFRAT100

ROHM

ROHM 2SCR554PFRAT100 is a NPN BJT transistor with hFE of 120, VCE of 80V, and IC of 1.5A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 300MHz.

COLLECTOR

1.5 A

80 V

SINGLE

120

R-PSSO-F3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

ZXTN04120HP5TC by Diodes Incorporated

ZXTN04120HP5TC

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1.5 A; JESD-609 Code: e3;

HIGH RELIABILITY

COLLECTOR

1.5 A

120 V

DARLINGTON

500

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

150 MHz

2STX2220 by STMicroelectronics

2STX2220

STMicroelectronics

2STX2220 by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, a collector current of 1.5A, and operates up to 150 °C. Its cylindrical package ensures reliable performance in various electronic circuits.

1.5 A

20 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

STX817A by STMicroelectronics

STX817A

STMicroelectronics

STX817A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9 W, an operating temp up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for compact electronic circuits.

1.5 A

80 V

SINGLE

25

TO-92

O-PBCY-W3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.9 W

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

STX715 by STMicroelectronics

STX715

STMicroelectronics

STX715 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages up to 80 V. Ideal for efficient circuit designs with its cylindrical package and through-hole terminals.

1.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

50 MHz

ZXTD6717E6QTA by Diodes Incorporated

ZXTD6717E6QTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

1.5 A

15 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

180 MHz

2DB1689-7 by Diodes Incorporated

2DB1689-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1.5 A;

1.5 A

12 V

SINGLE

270

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

2SCR554PT100 by ROHM

2SCR554PT100

ROHM

ROHM's 2SCR554PT100 is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1.5A, ideal for switching applications. With a min. DC current gain of 120 and nominal transition frequency of 300MHz, it offers high performance in a small outline package suitable for surface mount technology.

COLLECTOR

1.5 A

80 V

SINGLE

120

R-PSSO-F3

e2

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

SINGLE

10

SWITCHING

SILICON

300 MHz

2STR1230 by STMicroelectronics

2STR1230

STMicroelectronics

2STR1230 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max collector current of 1.5 A, a voltage rating of 30 V, and operates up to 150 °C. Its surface mount design ensures efficient space utilization in electronic circuits.

1.5 A

30 V

SINGLE

80

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.5 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STX715-AP by STMicroelectronics

STX715-AP

STMicroelectronics

STX715-AP by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 0.9 W, operates up to 150 °C, and supports collector-emitter voltages of 80 V. Ideal for efficient circuit designs in compact spaces.

1.5 A

80 V

SINGLE

40

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.9 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

50 MHz

MMSS8050-H-TPS01 by Micro Commercial Components

MMSS8050-H-TPS01

Micro Commercial Components

Small Signal Bipolar Transistors; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 200; Maximum Collector-Emitter Voltage: 25 V;

1.5 A

25 V

200

APT13003NZTR-G1 by Diodes Incorporated

APT13003NZTR-G1

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1.5 A;

1.5 A

530 V

SINGLE

5

TO-92

O-PBCY-W3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

1 W

MIL-STD-202

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

4 MHz

4150 ns

1000 ns

.4 V

2SAR554P5T100 by ROHM

2SAR554P5T100

ROHM

ROHM 2SAR554P5T100 is a PNP BJT transistor with VCEsat of 0.4V, hFE of 120, and IC of 1.5A. Ideal for switching applications in small outline packages, it operates up to 150°C with a max fT of 340MHz.

COLLECTOR

1.5 A

15 pF

80 V

SINGLE

120

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

YES

TIN

FLAT

SINGLE

10

SWITCHING

SILICON

340 MHz

.4 V

ASS8050-H-HF by Comchip Technology

ASS8050-H-HF

Comchip Technology

Comchip Technology's ASS8050-H-HF is a NPN BJT with VCEsat of 0.5V, hFE of 200, and IC of 1.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.

1.5 A

25 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

.3 W

AEC-Q101

YES

Tin (Sn)

GULL WING

DUAL

SILICON

100 MHz

.5 V

ASS8550-H-HF by Comchip Technology

ASS8550-H-HF

Comchip Technology

Comchip Technology's ASS8550-H-HF is a PNP BJT transistor with VCEsat of 0.5V, hFE of 200, and IC of 1.5A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.

1.5 A

25 V

SINGLE

200

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

.3 W

AEC-Q101

YES

GULL WING

DUAL

SILICON

100 MHz

.5 V