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DARLINGTON WITH BUILT-IN DIODE AND RESISTOR Small Signal Bipolar Junction Transistors (BJT) 12

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BSP50E6327HTSA1 by Infineon Technologies

BSP50E6327HTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;

COLLECTOR

1 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BSP60E6327HTSA1 by Infineon Technologies

BSP60E6327HTSA1

Infineon Technologies

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Package Shape: RECTANGULAR;

COLLECTOR

1 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

BSP62E6327HTSA1 by Infineon Technologies

BSP62E6327HTSA1

Infineon Technologies

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 2000;

COLLECTOR

1 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

2SD2143TL by ROHM

2SD2143TL

ROHM

ROHM 2SD2143TL is a NPN BJT with Darlington configuration, built-in diode and resistor. It has max power dissipation of 10W, hFE of 1000, and operates up to 150°C. Ideal for switching applications due to its high collector current (2A) and transition frequency (80MHz).

BUILT IN BIAS RESISTANCE RATIO IS 0.0857

COLLECTOR

2 A

70 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

1000

R-PSSO-G2

e2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

10 W

10 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

SINGLE

10

SWITCHING

SILICON

80 MHz

BC879,112 by NXP Semiconductors

BC879,112

NXP Semiconductors

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;

BUILT-IN BIAS RESISTOR

1 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.8 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

200 MHz

1.8 V

BSP61H6327XTSA1 by Infineon Technologies

BSP61H6327XTSA1

Infineon Technologies

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;

COLLECTOR

1 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

SILICON

200 MHz

BSP50H6327XTSA1 by Infineon Technologies

BSP50H6327XTSA1

Infineon Technologies

Infineon's BSP50H6327XTSA1 is a NPN BJT with Darlington configuration, ideal for switching applications. Features include hFE of 2000, VCE of 45V, and IC of 1A. With a fT of 200MHz, this transistor offers fast turn-on/off times making it suitable for high-speed operations in compact designs.

COLLECTOR

1 A

45 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

1500 ns

400 ns

BSP51H6327XTSA1 by Infineon Technologies

BSP51H6327XTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; JESD-609 Code: e3;

COLLECTOR

1 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

1500 ns

400 ns

BSP52H6327XTSA1 by Infineon Technologies

BSP52H6327XTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Package Style (Meter): SMALL OUTLINE;

COLLECTOR

1 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

1500 ns

400 ns

BSP62H6327XTSA1 by Infineon Technologies

BSP62H6327XTSA1

Infineon Technologies

BSP62H6327XTSA1 by Infineon is a PNP BJT with Darlington configuration, built-in diode, and resistor. It has a hFE of 2000, Vce of 80V, and fT of 200MHz. Ideal for switching applications, this transistor offers fast turn-on/off times and can handle up to 1A collector current in a surface-mount package.

COLLECTOR

1 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

1500 ns

400 ns

2SD1223(TE16L1,NQ) by Toshiba

2SD1223(TE16L1,NQ)

Toshiba

Toshiba's 2SD1223 NPN BJT features a min hFE of 1000, max VCE of 80V, and max IC of 4A. Ideal for switching applications, this Darlington transistor with built-in diode and resistor comes in a small outline package with gull wing terminals.

COLLECTOR

4 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

1000

R-PSSO-G2

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

SINGLE

SWITCHING

SILICON

ZXPD4000DH-7 by Diodes Incorporated

ZXPD4000DH-7

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;

2 A

120 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

2000

S-PDSO-N8

e4

1

1

8

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

.9 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

AMPLIFIER

SILICON

1.5 V