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Renesas Electronics RF Small Signal Field Effect Transistors (FET) 9

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
NE350184C by Renesas Electronics

NE350184C

Renesas Electronics

N-CHANNEL; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .07 A; Maximum Drain Current (Abs) (ID): .07 A;

.07 A

.07 A

150 Cel

N-CHANNEL

.165 W

FET RF Small Signal

BB502CBS-TL-H by Renesas Electronics

BB502CBS-TL-H

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Additional Features: LOW NOISE;

LOW NOISE

SINGLE WITH BUILT-IN DIODE

6 V

.02 A

.02 A

METAL-OXIDE SEMICONDUCTOR

.05 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.1 W

17 dB

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BB504CDS-TL-H by Renesas Electronics

BB504CDS-TL-H

Renesas Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; No. of Terminals: 4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

LOW NOISE

SINGLE WITH BUILT-IN DIODE

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

.05 pF

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.1 W

17 dB

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

NE3513M04-T2-A by Renesas Electronics

NE3513M04-T2-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .06 A; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 4 V;

SINGLE

4 V

.06 A

.015 A

HETERO-JUNCTION

KU BAND

R-PDSO-F4

1

4

ENHANCEMENT MODE

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.125 W

11.5 dB

YES

FLAT

DUAL

AMPLIFIER

GALLIUM ARSENIDE

NE3520S03-T1C-A by Renesas Electronics

NE3520S03-T1C-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Terminal Position: QUAD;

SINGLE

4 V

.07 A

.015 A

HETERO-JUNCTION

K BAND

S-PQMW-F4

1

4

ENHANCEMENT MODE

125 Cel

PLASTIC/EPOXY

SQUARE

MICROWAVE

N-CHANNEL

.165 W

11.5 dB

YES

FLAT

QUAD

AMPLIFIER

GALLIUM ARSENIDE

NE3516S02-T1C-A by Renesas Electronics

NE3516S02-T1C-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: QUAD; Maximum Drain Current (Abs) (ID): .06 A;

SINGLE

4 V

.06 A

.06 A

HETERO-JUNCTION

KU BAND

S-PQMW-F4

1

4

DEPLETION MODE

125 Cel

PLASTIC/EPOXY

RECTANGULAR

MICROWAVE

N-CHANNEL

.165 W

13 dB

YES

FLAT

QUAD

AMPLIFIER

GALLIUM ARSENIDE

NE5550279A-A by Renesas Electronics

NE5550279A-A

Renesas Electronics

NE5550279A-A by Renesas Electronics is a N-CHANNEL FET with 30V DS breakdown voltage, suitable for ULTRA HIGH-FREQUENCY applications. It operates in ENHANCEMENT MODE with 0.6A drain current and 6.25W power dissipation at max 150°C temperature, featuring a RECTANGULAR MICROWAVE package style.

SOURCE

SINGLE

30 V

.6 A

.6 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-XQMW-F4

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

MICROWAVE

N-CHANNEL

6.25 W

YES

FLAT

QUAD

SILICON

NE5550279A-T1-A by Renesas Electronics

NE5550279A-T1-A

Renesas Electronics

NE5550279A-T1-A by Renesas Electronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.6A Drain Current, and 6.25W Power Dissipation. It operates in ULTRA HIGH FREQUENCY BAND for RF applications like amplifiers due to its ENHANCEMENT MODE and MICROWAVE package style.

SOURCE

SINGLE

30 V

.6 A

.6 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-XQMW-F4

1

4

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

MICROWAVE

N-CHANNEL

6.25 W

YES

FLAT

QUAD

SILICON

NE3517S03-T1C-A by Renesas Electronics

NE3517S03-T1C-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Field Effect Transistor Technology: HETERO-JUNCTION; Maximum Operating Temperature: 125 Cel;

SINGLE

3 V

.015 A

HETERO-JUNCTION

K BAND

R-PXMW-F4

1

4

DEPLETION MODE

125 Cel

PLASTIC/EPOXY

RECTANGULAR

MICROWAVE

NOT SPECIFIED

N-CHANNEL

.165 W

11.5 dB

Not Qualified

Other Transistors

YES

FLAT

UNSPECIFIED

NOT SPECIFIED

AMPLIFIER

GALLIUM ARSENIDE