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Infineon Technologies RF Small Signal Field Effect Transistors (FET) 16

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
BF998E6327HTSA1 by Infineon Technologies

BF998E6327HTSA1

Infineon Technologies

BF998E6327HTSA1 by Infineon Technologies is an N-CHANNEL RF FET with 12V DS Breakdown Voltage. Operating in DEPLETION MODE, it has ULTRA HIGH FREQUENCY BAND capabilities. This SMALL OUTLINE transistor is ideal for DUAL GATE applications in SOURCE connections.

LOW NOISE

SOURCE

SINGLE

12 V

.03 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

BF999E6327HTSA1 by Infineon Technologies

BF999E6327HTSA1

Infineon Technologies

BF999E6327HTSA1 by Infineon Technologies is a RF Small Signal Field Effect Transistor (FET) with N-CHANNEL polarity. It operates in depletion mode and has a min DS breakdown voltage of 20V. This transistor is suitable for applications in the very high frequency band.

SINGLE

20 V

.03 A

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

R-PDSO-G3

e3

1

1

3

DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

BF1009SE6327HTSA1 by Infineon Technologies

BF1009SE6327HTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Package Style (Meter): SMALL OUTLINE; Additional Features: LOW NOISE;

LOW NOISE

SOURCE

SINGLE

12 V

.025 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

18 dB

YES

GULL WING

DUAL

AMPLIFIER

SILICON

BF1009SRE6327HTSA1 by Infineon Technologies

BF1009SRE6327HTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Additional Features: LOW NOISE;

LOW NOISE

SOURCE

SINGLE

12 V

.025 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

18 dB

YES

GULL WING

DUAL

AMPLIFIER

SILICON

BF2030E6814HTSA1 by Infineon Technologies

BF2030E6814HTSA1

Infineon Technologies

Infineon's BF2030E6814HTSA1 is an N-CHANNEL RF FET with 10V DS Breakdown Voltage, 20dB Power Gain, and operates in the Ultra High Frequency Band. Ideal for AMPLIFIER applications, this transistor has a DUAL GATE configuration in PLASTIC/EPOXY package with GULL WING terminals.

LOW NOISE

SOURCE

SINGLE

10 V

.04 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

20 dB

YES

GULL WING

DUAL

AMPLIFIER

SILICON

BF2030RE6814HTSA1 by Infineon Technologies

BF2030RE6814HTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: DUAL GATE, DEPLETION MODE; No. of Terminals: 4;

LOW NOISE

SOURCE

SINGLE

10 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.2 W

20 dB

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BF2030WH6814XTSA1 by Infineon Technologies

BF2030WH6814XTSA1

Infineon Technologies

BF2030WH6814XTSA1 by Infineon Technologies is a N-CHANNEL RF Small Signal FET with PLASTIC/EPOXY package. It operates in DUAL GATE, DEPLETION MODE and has ULTRA HIGH FREQUENCY BAND. This transistor is commonly used as an AMPLIFIER in various applications.

LOW NOISE

SOURCE

SINGLE

10 V

.04 A

.04 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.2 W

20 dB

FET General Purpose Power

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BF2040E6814HTSA1 by Infineon Technologies

BF2040E6814HTSA1

Infineon Technologies

Infineon's BF2040E6814HTSA1 is an N-CHANNEL RF FET with 10V DS breakdown voltage and 20dB power gain. Ideal for amplifiers in ultra-high frequency bands, it features a dual-gate, depletion mode operation and GULL WING terminals in a small outline package.

LOW NOISE

SOURCE

SINGLE

10 V

.04 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

20 dB

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF2040RE6814HTSA1 by Infineon Technologies

BF2040RE6814HTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G4;

LOW NOISE

SOURCE

SINGLE

10 V

.04 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

1

4

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

20 dB

YES

GULL WING

DUAL

AMPLIFIER

SILICON

BF2040WH6814XTSA1 by Infineon Technologies

BF2040WH6814XTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-609 Code: e3;

LOW NOISE

SOURCE

SINGLE

10 V

.04 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

1

4

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

20 dB

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BG3123RH6327XTSA1 by Infineon Technologies

BG3123RH6327XTSA1

Infineon Technologies

N-CHANNEL; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Transistor Application: AMPLIFIER; Additional Features: LOW NOISE;

LOW NOISE

12 V

.02 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

2

6

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

GULL WING

DUAL

AMPLIFIER

SILICON

BG3130H6327XTSA1 by Infineon Technologies

BG3130H6327XTSA1

Infineon Technologies

N-CHANNEL; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: DUAL GATE, DEPLETION MODE; Package Style (Meter): SMALL OUTLINE;

LOW NOISE

12 V

.025 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

e3

1

2

6

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BG3130RH6327XTSA1 by Infineon Technologies

BG3130RH6327XTSA1

Infineon Technologies

N-CHANNEL; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Terminal Form: GULL WING; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Drain Current (ID): .025 A;

LOW NOISE

12 V

.025 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

e3

2

6

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BG3130E6327HTSA1 by Infineon Technologies

BG3130E6327HTSA1

Infineon Technologies

N-CHANNEL; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Additional Features: LOW NOISE; Maximum Drain Current (ID): .025 A;

LOW NOISE

12 V

.025 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

2

6

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

GULL WING

DUAL

AMPLIFIER

SILICON

BG3430RE6327HTSA1 by Infineon Technologies

BG3430RE6327HTSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (ID): .025 A; Package Shape: RECTANGULAR; Additional Features: LOW NOISE;

LOW NOISE

COMPLEX

12 V

.025 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

2

6

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

BG5120KE6327HTSA1 by Infineon Technologies

BG5120KE6327HTSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW NOISE

COMPLEX

12 V

.02 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

2

6

DUAL GATE, DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON