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NO RF Small Signal Field Effect Transistors (FET) 8

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
NTE312 by Nte Electronics

NTE312

Nte Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: O-PBCY-W3; Qualification: Not Qualified;

SINGLE

JUNCTION

1 pF

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-W3

1

3

DEPLETION MODE

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.36 W

10 dB

Not Qualified

Other Transistors

NO

WIRE

BOTTOM

AMPLIFIER

SILICON

2N3819/D74Z by National Semiconductor

2N3819/D74Z

National Semiconductor

2N3819/D74Z by National Semiconductor is an N-CHANNEL RF FET with 3 terminals. It operates in DEPLETION MODE and has a Max Feedback Capacitance of 4 pF. Ideal for AMPLIFIER applications due to its SILICON element material and CYLINDRICAL package style.

SINGLE

JUNCTION

4 pF

TO-92

O-PBCY-T3

1

3

DEPLETION MODE

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

2N4416-E3 by Vishay Intertechnology

2N4416-E3

Vishay Intertechnology

2N4416-E3 by Vishay Intertechnology is an N-CHANNEL FET with 10 dB Gp, operating in DEPLETION MODE. It operates in ULTRA HIGH FREQUENCY BAND for SWITCHING applications. With a max power dissipation of 0.3 W and Crss of 0.8 pF, it's ideal for RF circuits requiring high frequency performance.

LOW NOISE

SINGLE

JUNCTION

.8 pF

ULTRA HIGH FREQUENCY BAND

TO-206AF

O-MBCY-W4

e3

1

1

4

DEPLETION MODE

150 Cel

METAL

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

10 dB

Not Qualified

Other Transistors

NO

MATTE TIN

WIRE

BOTTOM

SWITCHING

SILICON

BF245A,112 by NXP Semiconductors

BF245A,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Elements: 1; No. of Terminals: 3;

SINGLE

30 V

.025 A

JUNCTION

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

BF245B,112 by NXP Semiconductors

BF245B,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: THROUGH-HOLE; Terminal Finish: MATTE TIN;

SINGLE

30 V

.025 A

JUNCTION

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

BF245B,126 by NXP Semiconductors

BF245B,126

NXP Semiconductors

BF245B,126 by NXP Semiconductors is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY. With 0.3W power dissipation and 0.025A Drain Current, it has a max operating temperature of 150°C.

SINGLE

30 V

.025 A

JUNCTION

ULTRA HIGH FREQUENCY BAND

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

BF245C,112 by NXP Semiconductors

BF245C,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

SINGLE

30 V

.025 A

JUNCTION

ULTRA HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e3

1

3

DEPLETION MODE

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

N-CHANNEL

.3 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

MPF102G by Onsemi

MPF102G

Onsemi

MPF102G by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. Featuring a DEPLETION MODE operation, it has a max power dissipation of 0.2W and can withstand up to 125 °C operating temperature.

SINGLE

25 V

JUNCTION

3 pF

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

e1

1

3

DEPLETION MODE

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

N-CHANNEL

.2 W

Not Qualified

Other Transistors

NO

Tin/Silver/Copper (Sn/Ag/Cu)

THROUGH-HOLE

BOTTOM

40

AMPLIFIER

SILICON