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.08 A RF Small Signal Bipolar Junction Transistors (BJT) 7

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFP540ESDE6327HTSA1 by Infineon Technologies

BFP540ESDE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 34000 MHz; Maximum Collector Current (IC): .08 A; Package Shape: RECTANGULAR;

HIGH RELIABILITY, LOW NOISE

EMITTER

.08 A

.24 pF

4 V

SINGLE

L BAND

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

34000 MHz

BFP193WE6327HTSA1 by Infineon Technologies

BFP193WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Highest Frequency Band: L BAND;

COLLECTOR

.08 A

.9 pF

12 V

SINGLE

L BAND

R-PDSO-G4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

AMPLIFIER

SILICON

8000 MHz

BFP540FESDH6327XTSA1 by Infineon Technologies

BFP540FESDH6327XTSA1

Infineon Technologies

BFP540FESDH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.5V VCEO, 0.08A IC, and 30GHz fT. It is used in S Band amplifiers for high-frequency applications. The package is small outline, surface mountable with flat terminals, suitable for AEC-Q101 standards.

LOW NOISE

.08 A

.26 pF

4.5 V

SINGLE

S BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

30000 MHz

BFP620FH7764XTSA1 by Infineon Technologies

BFP620FH7764XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; No. of Terminals: 4;

LOW NOISE, HIGH RELIABILITY

.08 A

.2 pF

2.3 V

SINGLE

C BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON GERMANIUM

65000 MHz

BFP620FE7764 by Infineon Technologies

BFP620FE7764

Infineon Technologies

BFP620FE7764 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating in the C band up to 65 GHz. It has a max collector-emitter voltage of 2.3V and collector current of 0.08A, making it suitable for high-frequency applications like wireless communication systems. The package is surface mountable with a small outline shape and matte tin finish.

LOW NOISE, HIGH RELIABILITY

.08 A

.2 pF

2.3 V

SINGLE

C BAND

R-PDSO-F4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

FLAT

DUAL

SILICON GERMANIUM

65000 MHz

BFP540H6327XTSA1 by Infineon Technologies

BFP540H6327XTSA1

Infineon Technologies

BFP540H6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 30 GHz. It has a collector-emitter voltage of 4.5V and collector current of 0.08A, making it suitable for L Band amplifier applications. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

HIGH RELIABILITY

EMITTER

.08 A

.24 pF

4.5 V

SINGLE

L BAND

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

30000 MHz

2SC5084-O(TE85L,F) by Toshiba

2SC5084-O(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .08 A;

LOW NOISE

.08 A

1.15 pF

12 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Other Transistors

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz