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SEPARATE, 2 ELEMENTS RF Small Signal Bipolar Junction Transistors (BJT) 5

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFS17SH6327XTSA1 by Infineon Technologies

BFS17SH6327XTSA1

Infineon Technologies

The Infineon Technologies BFS17SH6327XTSA1 is an NPN RF BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 15V, fT of 2500 MHz, and a small outline package style for surface mount assembly.

.025 A

.8 pF

15 V

SEPARATE, 2 ELEMENTS

ULTRA HIGH FREQUENCY BAND

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

2500 MHz

IMX5T108 by ROHM

IMX5T108

ROHM

ROHM's IMX5T108 is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.3W, fT of 1400MHz, and hFE of 27. The package is small outline with gull wing terminals, suitable for surface mount assembly at up to 260°C peak reflow temperature.

.05 A

SEPARATE, 2 ELEMENTS

27

R-PDSO-G6

e1

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

1400 MHz

EMX5T2R by ROHM

EMX5T2R

ROHM

ROHM's EMX5T2R is a NPN BJT with 2 elements, ideal for amplifier applications. It features a max collector-emitter voltage of 11V, fT of 3200MHz, and hFE min of 27. With a small outline package style and surface mount capability, it offers high performance in compact designs.

.05 A

1.55 pF

11 V

SEPARATE, 2 ELEMENTS

27

R-PDSO-F6

e2

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

DUAL

10

AMPLIFIER

SILICON

3200 MHz

BFM505,115 by NXP Semiconductors

BFM505,115

NXP Semiconductors

NXP Semiconductors' BFM505,115 is a NPN RF BJT transistor with 2 elements for switching applications. It operates in L Band with fT of 9000 MHz and can handle max collector-emitter voltage of 8V. This small outline package has Gull Wing terminals and can withstand up to 175°C operating temperature.

LOW NOISE, HIGH RELIABILITY

.018 A

8 V

SEPARATE, 2 ELEMENTS

L BAND

R-PDSO-G6

e3

1

2

6

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

9000 MHz

BFM520,115 by NXP Semiconductors

BFM520,115

NXP Semiconductors

NXP Semiconductors' BFM520,115 is a NPN RF BJT transistor with 2 elements for switching applications. It operates in L Band with max fT of 9000 MHz. With a max IC of 0.07 A and hFE of 60, it's ideal for high-frequency signal amplification in compact electronic devices.

LOW NOISE, HIGH RELIABILITY

.07 A

8 V

SEPARATE, 2 ELEMENTS

60

L BAND

R-PDSO-G6

e3

2

6

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

9000 MHz