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NO RF Power Field Effect Transistors (FET) 16

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
CGH35240F by Wolfspeed

CGH35240F

Wolfspeed

CGH35240F by Wolfspeed is an N-CHANNEL RF Power FET with 84V DS Breakdown Voltage and 10.5dB Power Gain, ideal for S BAND applications. Featuring Gallium Nitride technology, it operates in DEPLETION MODE at temperatures from -40°C to 150°C, with a max ID of 24A.

SOURCE

SINGLE

84 V

24 A

HIGH ELECTRON MOBILITY

S BAND

R-CDFM-F2

1

2

DEPLETION MODE

150 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

10.5 dB

Not Qualified

NO

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

GALLIUM NITRIDE

SD2900 by STMicroelectronics

SD2900

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Form: FLAT;

SINGLE

65 V

.83 A

.9 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

SD2902 by STMicroelectronics

SD2902

STMicroelectronics

SD2902 by STMicroelectronics is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring a max Drain Current of 2.5A, this METAL-OXIDE SEMICONDUCTOR FET has a PLASTIC/EPOXY package and can withstand temperatures up to 200 °C.

SINGLE

65 V

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

SD2904 by STMicroelectronics

SD2904

STMicroelectronics

SD2904 by STMicroelectronics is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 5A. This SINGLE configuration transistor is commonly used as an AMPLIFIER in various applications due to its SILICON element material and ENHANCEMENT MODE operation.

SINGLE

65 V

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

SD2931 by STMicroelectronics

SD2931

STMicroelectronics

SD2931 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 20 A, a breakdown voltage of 125 V, and can dissipate up to 292 W. Ideal for high-performance amplification in communication systems.

SINGLE

125 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

e0

1

4

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

N-CHANNEL

292 W

Not Qualified

FET General Purpose Power

NO

TIN LEAD

FLAT

RADIAL

SILICON

SD2918 by STMicroelectronics

SD2918

STMicroelectronics

SD2918 by STMicroelectronics is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 6A Drain Current. It operates in the Ultra High Frequency Band, suitable for high-power applications. With a max power dissipation of 175W and operating temperature up to 200 °C, it is ideal for demanding RF power amplification needs.

SINGLE

125 V

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

O-PRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

175 W

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

SILICON

IXZR08N120 by IXYS Corporation

IXZR08N120

IXYS Corporation

IXZR08N120 by IXYS Corp is an N-CHANNEL FET with 1200V DS breakdown voltage, 8A max drain current, and 250W power dissipation. It's used for switching applications in enhancement mode, featuring a single configuration with built-in diode. Ideal for high-power RF systems due to its isolated case connection and metal-oxide semiconductor technology.

ISOLATED

SINGLE WITH BUILT-IN DIODE

1200 V

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

250 W

Not Qualified

FET General Purpose Power

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BLF175,112 by NXP Semiconductors

BLF175,112

NXP Semiconductors

NXP Semiconductors' BLF175,112 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 4A Drain Current. Ideal for amplifiers in the VHF band, it operates in Enhancement Mode with a max power dissipation of 68W. The METAL-OXIDE SEMICONDUCTOR technology ensures high performance in very high frequency applications.

HIGH RELIABILITY

ISOLATED

SINGLE

125 V

4 A

4 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

O-CRFM-F4

NOT APPLICABLE

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

68 W

68 W

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

BLF242,112 by NXP Semiconductors

BLF242,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 16 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Additional Features: LOW NOISE, HIGH RELIABILITY;

LOW NOISE, HIGH RELIABILITY

ISOLATED

SINGLE

65 V

1 A

1 A

5 ohm

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

O-CRFM-F4

NOT APPLICABLE

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

16 W

16 W

13 dB

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

BLF244,112 by NXP Semiconductors

BLF244,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: 1.5 ohm;

LOW NOISE, HIGH RELIABILITY

ISOLATED

SINGLE

65 V

3 A

3 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

O-CRFM-F4

NOT APPLICABLE

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

38 W

38 W

13 dB

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

BLF245,112 by NXP Semiconductors

BLF245,112

NXP Semiconductors

NXP Semiconductors BLF245,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 13dB Power Gain. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 68W and operates in enhancement mode at up to 200°C.

LOW NOISE

ISOLATED

SINGLE

65 V

6 A

6 A

.75 ohm

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

O-CRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

68 W

68 W

13 dB

Not Qualified

FET General Purpose Power

NO

FLAT

RADIAL

NOT SPECIFIED

AMPLIFIER

SILICON

CGHV40030F by Wolfspeed

CGHV40030F

Wolfspeed

CGHV40030F by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage and 15dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring GALLIUM NITRIDE technology, it operates from -40 to 85 °C with a max ID of 4.2A and 0.15pF Crss for high-performance needs.

SOURCE

SINGLE

150 V

4.2 A

HIGH ELECTRON MOBILITY

.15 pF

C BAND

R-CDFM-F2

1

2

DEPLETION MODE

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

15 dB

NO

FLAT

DUAL

AMPLIFIER

GALLIUM NITRIDE

CG2H40045F by Wolfspeed

CG2H40045F

Wolfspeed

CG2H40045F by Wolfspeed is an N-CHANNEL RF Power FET with 84V DS Breakdown Voltage and 15dB Power Gain, ideal for S BAND applications. Featuring Gallium Nitride technology, it operates in DEPLETION MODE at temperatures from -40 to 150 °C, with a max ID of 6A.

SOURCE

SINGLE

84 V

6 A

HIGH ELECTRON MOBILITY

.6 pF

S BAND

R-CDFM-F2

1

2

DEPLETION MODE

150 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

15 dB

NO

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

GALLIUM NITRIDE

CG2H40025F by Wolfspeed

CG2H40025F

Wolfspeed

CG2H40025F by Wolfspeed is an N-CHANNEL RF Power FET with a 84V DS Breakdown Voltage and 13dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring Gallium Nitride technology, it operates from -40 to 150 °C with a max ID of 3A and Crss of 0.4pF.

SOURCE

SINGLE

84 V

3 A

HIGH ELECTRON MOBILITY

.4 pF

C BAND

R-CDFM-F2

1

2

DEPLETION MODE

150 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

13 dB

NO

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

GALLIUM NITRIDE

CGHV59070F by Wolfspeed

CGHV59070F

Wolfspeed

CGHV59070F by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage and 15.55 dB Power Gain, ideal for AMPLIFIER applications in C BAND frequencies. Featuring Gallium Nitride technology, it operates in DEPLETION MODE with a max ID of 6.3A and can withstand temperatures from -40 to 150 °C.

SOURCE

SINGLE

150 V

6.3 A

HIGH ELECTRON MOBILITY

.26 pF

C BAND

R-CDFM-F2

e4

1

2

DEPLETION MODE

150 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

15.55 dB

NO

Gold/Nickel (Au/Ni)

FLAT

DUAL

AMPLIFIER

GALLIUM NITRIDE

CG2H40035F by Wolfspeed

CG2H40035F

Wolfspeed

CG2H40035F by Wolfspeed is a N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 84V and a min Power Gain (Gp) of 13.5dB. It is commonly used as an amplifier in C Band applications.

SOURCE

SINGLE

84 V

4.5 A

HIGH ELECTRON MOBILITY

.7 pF

C BAND

R-CDFM-F2

1

2

DEPLETION MODE

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

13.5 dB

NO

FLAT

DUAL

AMPLIFIER

GALLIUM NITRIDE