Loading...

73 W RF Power Field Effect Transistors (FET) 8

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PD54008 by STMicroelectronics

PD54008

STMicroelectronics

STMicroelectronics PD54008 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 5A Drain Current. It operates in the Ultra High Frequency Band, suitable for amplifier applications. The transistor features a GULL WING terminal form, SMALL OUTLINE package style, and can handle up to 73W power dissipation at 165 °C.

HIGH RELIABILITY

SOURCE

SINGLE

25 V

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e0

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

73 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

PD54008S-E by STMicroelectronics

PD54008S-E

STMicroelectronics

PD54008S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance up to 165 °C.

HIGH RELIABILITY

SOURCE

SINGLE

25 V

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

73 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

PD54008TR-E by STMicroelectronics

PD54008TR-E

STMicroelectronics

PD54008TR-E by STMicroelectronics is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with a max ID of 5A and 73W power dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR technology, and can withstand temperatures up to 165°C.

HIGH RELIABILITY

SOURCE

SINGLE

25 V

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

73 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

PD55015-E by STMicroelectronics

PD55015-E

STMicroelectronics

STMicroelectronics' PD55015-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, it offers 5A Drain Current and 73W Power Dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and can withstand up to 165°C operating temp.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

73 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

PD55015S-E by STMicroelectronics

PD55015S-E

STMicroelectronics

STMicroelectronics' PD55015S-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 5A Drain Current. The transistor comes in a PLASTIC/EPOXY package, suitable for surface mount with 73W power dissipation capability.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

73 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

AMPLIFIER

SILICON

PD57045-E by STMicroelectronics

PD57045-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 65 V;

SOURCE

SINGLE

65 V

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

73 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON

PD57045S-E by STMicroelectronics

PD57045S-E

STMicroelectronics

PD57045S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, breakdown voltage of 65 V, and operates in the ultra-high frequency band. Ideal for compact designs with high power dissipation up to 73 W.

SOURCE

SINGLE

65 V

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

73 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

PD57045TR-E by STMicroelectronics

PD57045TR-E

STMicroelectronics

PD57045TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance with a max power dissipation of 73 W.

SOURCE

SINGLE

65 V

5 A

5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

73 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON