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500 W RF Power Field Effect Transistors (FET) 8

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
SD2932W by STMicroelectronics

SD2932W

STMicroelectronics

SD2932W by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 500W max power dissipation. Ideal for high-power applications, it operates at up to 200°C.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

200 Cel

NOT SPECIFIED

N-CHANNEL

500 W

FET General Purpose Powers

NOT SPECIFIED

SD2942W by STMicroelectronics

SD2942W

STMicroelectronics

SD2942W by STMicroelectronics is a N-CHANNEL RF Power FET with 40A ID and 500W power dissipation. It operates at max temp of 200°C, suitable for high-power RF applications in various industries.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

200 Cel

NOT SPECIFIED

N-CHANNEL

500 W

FET General Purpose Powers

NOT SPECIFIED

SD2932 by STMicroelectronics

SD2932

STMicroelectronics

SD2932 by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 500W. It operates in the ultra-high frequency band, making it ideal for high-power applications like amplifiers and transmitters. The transistor features a metal-oxide semiconductor technology and can withstand temperatures up to 200°C.

SOURCE

SINGLE

125 V

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

500 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SILICON

BLF248,112 by NXP Semiconductors

BLF248,112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .15 ohm;

HIGH RELIABILITY

SOURCE

COMMON SOURCE, 2 ELEMENTS

65 V

25 A

25 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

R-CDFM-F4

2

4

ENHANCEMENT MODE

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

500 W

500 W

10 dB

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BLF278,112 by NXP Semiconductors

BLF278,112

NXP Semiconductors

The NXP Semiconductors BLF278,112 is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage and 20dB Power Gain. Commonly used in amplifiers for Very High Frequency applications, it features a max power dissipation of 500W and operates at up to 200°C.

HIGH RELIABILITY

SOURCE

COMMON SOURCE, 2 ELEMENTS

125 V

18 A

18 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

R-CDFM-F4

2

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

500 W

500 W

20 dB

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

BLF368,112 by NXP Semiconductors

BLF368,112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Package Style (Meter): FLANGE MOUNT; Terminal Form: FLAT;

HIGH RELIABILITY

SOURCE

COMMON SOURCE, 2 ELEMENTS

65 V

25 A

25 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

R-CDFM-F4

2

4

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

500 W

500 W

12 dB

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

SD3932 by STMicroelectronics

SD3932

STMicroelectronics

SD3932 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and operates in the ultra-high frequency band. This versatile transistor supports surface mount configurations and withstands temperatures up to 200 °C.

SOURCE

SINGLE

250 V

20 A

20 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

500 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

SD2942 by STMicroelectronics

SD2942

STMicroelectronics

SD2942 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, breakdown voltage of 130 V, and can dissipate up to 500 W. Ideal for high-performance RF amplification in compact designs.

SOURCE

SINGLE

130 V

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

500 W

Not Qualified

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SILICON