Loading...

31.7 W RF Power Field Effect Transistors (FET) 9

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
PD57018S by STMicroelectronics

PD57018S

STMicroelectronics

STMicroelectronics PD57018S is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. Operating in the Ultra High Frequency Band, it has a max Drain Current of 2.5A and can handle up to 31.7W power dissipation. Ideal for amplifier applications due to its small outline package style and source case connection.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e0

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

31.7 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

FLAT

DUAL

AMPLIFIER

SILICON

PD57018 by STMicroelectronics

PD57018

STMicroelectronics

STMicroelectronics PD57018 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a max Drain Current of 2.5A and can handle up to 31.7W power dissipation at 165 °C operating temperature.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e0

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

31.7 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

PD55003S by STMicroelectronics

PD55003S

STMicroelectronics

STMicroelectronics PD55003S is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 2.5A and can handle up to 31.7W Power Dissipation at 165°C operating temperature.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e0

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

31.7 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

FLAT

DUAL

AMPLIFIER

SILICON

PD55003 by STMicroelectronics

PD55003

STMicroelectronics

STMicroelectronics PD55003 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 2.5A Drain Current and 31.7W Power Dissipation in a SMALL OUTLINE package.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e0

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

31.7 W

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

PD57018-E by STMicroelectronics

PD57018-E

STMicroelectronics

STMicroelectronics PD57018-E is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, GULL WING terminals, and a SMALL OUTLINE package style.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

31.7 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

AMPLIFIER

SILICON

PD57018S-E by STMicroelectronics

PD57018S-E

STMicroelectronics

PD57018S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2.5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface mount device ensures efficient performance with a max power dissipation of 31.7 W.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

31.7 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

PD57018STR-E by STMicroelectronics

PD57018STR-E

STMicroelectronics

PD57018STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 2.5 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance in demanding environments.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

31.7 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

PD57018TR-E by STMicroelectronics

PD57018TR-E

STMicroelectronics

PD57018TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications, featuring a max drain current of 2.5 A and a breakdown voltage of 65 V. It operates in the ultra-high frequency band with a power dissipation of 31.7 W. This surface-mount transistor ensures reliable performance up to 165 °C.

HIGH RELIABILITY

SOURCE

SINGLE

65 V

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-G2

e3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

N-CHANNEL

31.7 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

PD55003STR-E by STMicroelectronics

PD55003STR-E

STMicroelectronics

STMicroelectronics PD55003STR-E is a N-CHANNEL RF FET with 40V DS breakdown voltage, suitable for amplifier applications in the UHF band. It has a max drain current of 2.5A and operates in enhancement mode, offering high power dissipation up to 31.7W in a small outline package.

HIGH RELIABILITY

SOURCE

SINGLE

40 V

2.5 A

2.5 A

METAL-OXIDE SEMICONDUCTOR

ULTRA HIGH FREQUENCY BAND

R-PDSO-F2

e3

3

1

2

ENHANCEMENT MODE

165 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

31.7 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

AMPLIFIER

SILICON